SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorMikhail M. Eremenko
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    Mikhail M. Eremenko
    Mikhail M. Eremenko

    Effect of FIB-modification of Si (111) surface on GaAs nanowire growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Eremenko M.M.Balakirev S.V.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 16
    • 5699
    • Pages: 36-41

    Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

    Condensed matter physics
    Balakirev S.V.Kirichenko D.V.Chernenko N.E.Shandyba N.A.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 13
    • 5910
    • Pages: 42-47

    Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

    Condensed matter physics
    Chernenko N.E.Kirichenko D.V.Shandyba N.A.Balakirev S.V.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 19
    • 5573
    • Pages: 48-53

    Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

    Condensed matter physics
    Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 24
    • 5551
    • Pages: 54-58

    Study of FIB-modified silicon areas by AFM and Raman spectroscopy

    Condensed matter physics
    Nikitina L.S.Lakhina E.A.Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 23
    • 5550
    • Pages: 59-63

    Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

    Physical materials technology
    Balakirev S.V.Lakhina E.A.Kirichenko D.V.Chernenko N.E.Shandyba N.A.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 19
    • 5656
    • Pages: 315-319

    Effect of plasma-chemical treatment of Si (001) substrates on the subsequent epitaxial growth of GaAs

    Condensed matter physics
    Eremenko M.M.Nikitina L.S.Jityaeva J.Yu.Lakhina E.A.Klimin V.S.Ageev O.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 23
    • 4561
    • Pages: 122-127

    Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si (111)

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 20
    • 3194
    • Pages: 28-33

    Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

    Condensed matter physics
    Eremenko M.M.Shandyba N.A.Chernenko N.E.Jityaeva J.Yu.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 16
    • 3099
    • Pages: 75-78

    Ordered GaAs NW growth on Si (111) substrates modified by two-step FIB treatment

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Dukhan D.D.Chernenko N.E.Kirichenko D.V.Kugaevsky A.D.Makhov I.S.Kryzhanovskaya N.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 10
    • 800
    • Pages: 19-22

    Localized Ga droplets formation on nanopatterned silicon substrates

    Condensed matter physics
    Eremenko M.M.Shandyba N.A.Chernenko N.E.Kirichenko D.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 6
    • 685
    • Pages: 57-59

    Formation of site-controlled InAs quantum dots on nanopatterned GaAs (111)B surfaces

    Atom physics and physics of clusters and nanostructures
    Balakirev S.V.Chernenko N.E.Shandyba N.A.Kirichenko D.V.Dukhan D.D.Eremenko M.M.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 5
    • 720
    • Pages: 115-118