Eremenko Mikhail M.
Latest issues
- 2024, Volume 17 Issue 1
- 2023, Volume 16 Issue 4 Full text
- 2023, Volume 16 Issue 3.2 Full text
- 2023, Volume 16 Issue 3.1 Full text
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 10
- 1661
- Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 7
- 1767
- Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 1647
- Pages: 48-53
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 19
- 1678
- Pages: 54-58
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 1685
- Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 12
- 1698
- Pages: 315-319
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 5
- 607
- Pages: 122-127