SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
    AuthorSergey V. Balakirev
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    Latest issues
    Sergey V. Balakirev
    Sergey V. Balakirev

    Effect of FIB-modification of Si (111) surface on GaAs nanowire growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Eremenko M.M.Balakirev S.V.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 16
    • 5798
    • Pages: 36-41

    Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

    Condensed matter physics
    Balakirev S.V.Kirichenko D.V.Chernenko N.E.Shandyba N.A.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 13
    • 6016
    • Pages: 42-47

    Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

    Condensed matter physics
    Chernenko N.E.Kirichenko D.V.Shandyba N.A.Balakirev S.V.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 19
    • 5696
    • Pages: 48-53

    Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

    Condensed matter physics
    Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 24
    • 5646
    • Pages: 54-58

    Study of FIB-modified silicon areas by AFM and Raman spectroscopy

    Condensed matter physics
    Nikitina L.S.Lakhina E.A.Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 23
    • 5652
    • Pages: 59-63

    Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

    Physical materials technology
    Balakirev S.V.Lakhina E.A.Kirichenko D.V.Chernenko N.E.Shandyba N.A.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 19
    • 5753
    • Pages: 315-319

    Droplet epitaxy of site-controlled In/GaAs (001) nanostructures with a variable distance: experiments and simulations

    Condensed matter physics
    Balakirev S.V.Kirichenko D.V.Shandyba N.A.Chernenko N.E.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 20
    • 4804
    • Pages: 41-46

    Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

    Condensed matter physics
    Lakhina E.A.Shandyba N.A.Chernenko N.E.Kirichenko D.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 38
    • 5350
    • Pages: 53-58

    Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

    Condensed matter physics
    Chernenko N.E.Makhov I.S.Balakirev S.V.Kirichenko D.V.Shandyba N.A.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 20
    • 4547
    • Pages: 64-68

    Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

    Condensed matter physics
    Kirichenko D.V.Chernenko N.E.Shandyba N.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 22
    • 4776
    • Pages: 74-78

    Effect of ion dose and accelerating voltage during focused ion beam Si (111) surface treatment on GaAs nanowires growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 17
    • 4801
    • Pages: 79-83

    Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

    Simulation of physical processes
    Dukhan D.D.Balakirev S.V.Voloshina E.N.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 10
    • 4784
    • Pages: 193-197

    Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si (111)

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 20
    • 3304
    • Pages: 28-33

    Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

    Condensed matter physics
    Chernenko N.E.Makhov I.S.Melnichenko I.A.Yakunina K.D.Balakirev S.V.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 3362
    • Pages: 38-42

    Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs (111) surface

    Condensed matter physics
    Lakhina E.A.Chernenko N.E.Shandyba N.A.Kirichenko D.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 14
    • 3397
    • Pages: 58-62

    Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

    Condensed matter physics
    Eremenko M.M.Shandyba N.A.Chernenko N.E.Jityaeva J.Yu.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 16
    • 3204
    • Pages: 75-78

    Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

    Condensed matter physics
    Kirichenko D.V.Makhov I.S.Balakirev S.V.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 21
    • 3324
    • Pages: 79-83

    Ab initio study of In adsorption on AlxGa1-xAs substrates at the first stages of droplet epitaxy

    Simulation of physical processes
    Dukhan D.D.Balakirev S.V.Voloshina E.N.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 14
    • 3524
    • Pages: 100-104

    Simulation of an all-optical logical comparator based on a GaAs photonic crystal operating at a wavelength of 1.3 μm

    Simulation of physical processes
    Pleninger M.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 3337
    • Pages: 105-109

    Ordered GaAs NW growth on Si (111) substrates modified by two-step FIB treatment

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Dukhan D.D.Chernenko N.E.Kirichenko D.V.Kugaevsky A.D.Makhov I.S.Kryzhanovskaya N.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 11
    • 897
    • Pages: 19-22

    Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2

    Physical optics
    Melnichenko I.A.Shugabaev T.Gridchin V.O.Kryzhanovskaya N.V.Balakirev S.V.Solodovnik M.S.Zhukov A.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 5
    • 791
    • Pages: 237-241

    Localized Ga droplets formation on nanopatterned silicon substrates

    Condensed matter physics
    Eremenko M.M.Shandyba N.A.Chernenko N.E.Kirichenko D.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 6
    • 778
    • Pages: 57-59

    Simulation of light propagation in waveguides coupled to hexagonal microcavities formed in the GaAs-based photonic crystal

    Simulation of physical processes
    Pleninger M.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 3
    • 773
    • Pages: 86-90

    Formation of site-controlled InAs quantum dots on nanopatterned GaAs (111)B surfaces

    Atom physics and physics of clusters and nanostructures
    Balakirev S.V.Chernenko N.E.Shandyba N.A.Kirichenko D.V.Dukhan D.D.Eremenko M.M.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 6
    • 821
    • Pages: 115-118