Balakirev Sergey V.
Latest issues
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1
- 2024, Volume 17 Issue 4 Full text
- 2024, Volume 17 Issue 3.2 Full text
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 3474
- Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 3607
- Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 3334
- Pages: 48-53
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 22
- 3427
- Pages: 54-58
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 3446
- Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 3483
- Pages: 315-319
Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 2473
- Pages: 41-46
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 36
- 2842
- Pages: 53-58
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 17
- 2396
- Pages: 64-68
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 19
- 2510
- Pages: 74-78
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 2505
- Pages: 79-83
Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 2528
- Pages: 193-197
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 1069
- Pages: 28-33
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 7
- 1047
- Pages: 38-42
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 10
- 1141
- Pages: 58-62
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 1048
- Pages: 75-78
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 1090
- Pages: 79-83
Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy
- Year: 2024
- Volume: 17
- Issue: 3.1
- 11
- 1139
- Pages: 100-104
Simulation of an all-optical logical comparator based on a GaAs photonic crystal operating at a wavelength of 1.3 μm
- Year: 2024
- Volume: 17
- Issue: 3.1
- 8
- 1071
- Pages: 105-109