Search
SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics
Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
Английский
Русский
Version for the visually impaired
About the journal
Menu
Editorial board
Editor-in-Chief
All issues
Guide for Authors
Menu
Submission contents and structure
Formatting guidelines
Publication ethics
Submission process
Artificial Intelligence
Peer review
Article abstract
References
Оформление рисунков
Lisence Agreement
News
Journal metrics
Contact us
Author
Balakirev Sergey V.
Submit Your Paper
Latest issues
2025
,
Volume 18
Issue 1.1
Full text
2025
,
Volume 18
Issue 1
2024
,
Volume 17
Issue 4
Full text
2024
,
Volume 17
Issue 3.2
Full text
Balakirev Sergey V.
decodeDefault
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
Condensed matter physics
Shandyba N.A.
Kirichenko D.V.
Chernenko N.E.
Eremenko M.M.
Balakirev S.V.
Solodovnik M.S.
Year: 2022
Volume: 15
Issue: 3.3
14
3474
Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
Condensed matter physics
Balakirev S.V.
Kirichenko D.V.
Chernenko N.E.
Shandyba N.A.
Eremenko M.M.
Solodovnik M.S.
Year: 2022
Volume: 15
Issue: 3.3
11
3607
Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
Condensed matter physics
Chernenko N.E.
Kirichenko D.V.
Shandyba N.A.
Balakirev S.V.
Eremenko M.M.
Solodovnik M.S.
Year: 2022
Volume: 15
Issue: 3.3
14
3334
Pages: 48-53
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
Condensed matter physics
Eremenko M.M.
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Ageev O.A.
Year: 2022
Volume: 15
Issue: 3.3
22
3427
Pages: 54-58
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
Condensed matter physics
Nikitina L.S.
Lakhina E.A.
Eremenko M.M.
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Ageev O.A.
Year: 2022
Volume: 15
Issue: 3.3
18
3446
Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
Physical materials technology
Balakirev S.V.
Lakhina E.A.
Kirichenko D.V.
Chernenko N.E.
Shandyba N.A.
Eremenko M.M.
Solodovnik M.S.
Year: 2022
Volume: 15
Issue: 3.3
17
3483
Pages: 315-319
Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations
Condensed matter physics
Balakirev S.V.
Kirichenko D.V.
Shandyba N.A.
Chernenko N.E.
Solodovnik M.S.
Year: 2023
Volume: 16
Issue: 3.1
20
2473
Pages: 41-46
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
Condensed matter physics
Lakhina E.A.
Shandyba N.A.
Chernenko N.E.
Kirichenko D.V.
Balakirev S.V.
Solodovnik M.S.
Year: 2023
Volume: 16
Issue: 3.1
36
2842
Pages: 53-58
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
Condensed matter physics
Chernenko N.E.
Makhov I.S.
Balakirev S.V.
Kirichenko D.V.
Shandyba N.A.
Kryzhanovskaya N.V.
Solodovnik M.S.
Year: 2023
Volume: 16
Issue: 3.1
17
2396
Pages: 64-68
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
Condensed matter physics
Kirichenko D.V.
Chernenko N.E.
Shandyba N.A.
Balakirev S.V.
Solodovnik M.S.
Year: 2023
Volume: 16
Issue: 3.1
19
2510
Pages: 74-78
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
Condensed matter physics
Shandyba N.A.
Kirichenko D.V.
Chernenko N.E.
Sharov V.A.
Balakirev S.V.
Solodovnik M.S.
Year: 2023
Volume: 16
Issue: 3.1
15
2505
Pages: 79-83
Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy
Simulation of physical processes
Dukhan D.D.
Balakirev S.V.
Voloshina E.N.
Solodovnik M.S.
Year: 2023
Volume: 16
Issue: 3.1
9
2528
Pages: 193-197
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
Condensed matter physics
Shandyba N.A.
Eremenko M.M.
Sharov V.A.
Balakirev S.V.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
14
1069
Pages: 28-33
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
Condensed matter physics
Chernenko N.E.
Makhov I.S.
Melnichenko I.A.
Yakunina K.D.
Balakirev S.V.
Kryzhanovskaya N.V.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
7
1047
Pages: 38-42
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface
Condensed matter physics
Lakhina E.A.
Chernenko N.E.
Shandyba N.A.
Kirichenko D.V.
Balakirev S.V.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
10
1141
Pages: 58-62
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
Condensed matter physics
Eremenko M.M.
Shandyba N.A.
Chernenko N.E.
Jityaeva J.Yu.
Balakirev S.V.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
12
1048
Pages: 75-78
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
Condensed matter physics
Kirichenko D.V.
Makhov I.S.
Balakirev S.V.
Kryzhanovskaya N.V.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
14
1090
Pages: 79-83
Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy
Simulation of physical processes
Dukhan D.D.
Balakirev S.V.
Voloshina E.N.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
11
1139
Pages: 100-104
Simulation of an all-optical logical comparator based on a GaAs photonic crystal operating at a wavelength of 1.3 μm
Simulation of physical processes
Pleninger M.
Balakirev S.V.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
8
1071
Pages: 105-109
🍪
We use cookies and recommendation technologies to enhance the website's performance. By continuing to use this site
you agree to the use of cookies
.
Accept