Latest issues
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1
- 2025,Volume 18Issue 4.1 Full text
- 2025,Volume 18Issue 4
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 5550
- Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 19
- 5656
- Pages: 315-319
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 38
- 5243
- Pages: 53-58
Effect of plasma-chemical treatment of Si (001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 23
- 4561
- Pages: 122-127
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs (111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 3290
- Pages: 58-62

