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Elena N. Voloshina
Affiliation
Shanghai University
Shanghai, China
Publications
Orcid ID
0000-0002-1799-1125Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 4667
- Pages: 193-197
Ab initio study of In adsorption on AlxGa1-xAs substrates at the first stages of droplet epitaxy
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 3405
- Pages: 100-104

