Igor V. Ilkiv
Igor V. Ilkiv

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 36
  • 6333
  • Pages: 75-79

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 16
  • 4991
  • Pages: 289-293

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 31
  • 5988
  • Pages: 341-345

MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 10
  • 1446
  • Pages: 148-151

Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si (111) substrates

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 7
  • 1361
  • Pages: 152-155

MBE growth of GaAs nanowires with a silicon rich particle on the top

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 4.1
  • 12
  • 1334
  • Pages: 62-66