Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
Authors:
Ilkiv Igor V. Kotlyar Konstantin P. Osipov Andrey V. Reznik Rodion R. Cirlin George E.
Abstract:

Raman spectroscopy was applied to investigate a series of Ge films grown on GaAs and AlGaAs nanowires by molecular beam epitaxy. The formation of both cubic and hexagonal Ge phases was revealed using Raman spectroscopy. DFT calculations of the volumetric energies suggest Ge-16R or Ge-6H hexagonal polytype.

Funding:

The samples were grown under the financial support of the Ministry of Science and Higher Education of the Russian Federation (state task No 0791-2023-0004). Spectroscopic ellipsometry studies of grown samples were done under the financial support of St. Petersburg State University under research grant No 94031047. The Raman spectra were obtained with the support of St. Petersburg State University Resource Centre “Centre for Optical and Laser Materials Research”. DFT calculations were done under the financial support of St. Petersburg State University under research grant No 94033852.

Key words:
nanowire molecular beam epitaxy germanium semiconductors
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