Articles by keywords "semiconductors"
Investigation of self-hybridized waveguide exciton-polaritons in the two-dimensional antiferromagnet CrSBr at room temperature
- Year: 2026
- Volume: 19
- Issue: 1.1
- 12
- 859
- Pages: 146-150
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 12
- 822
- Pages: 45-50
Electrostatic control of correlated phases in spatially inhomogeneous two-dimensional moiré structures
- Year: 2025
- Volume: 18
- Issue: 3.2
- 10
- 1455
- Pages: 49-52
Effect of rapid thermal annealing on the properties of GaPN(As)-based heterostructures grown on silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 9
- 1342
- Pages: 45-48
Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 1361
- Pages: 152-155
The length distribution of nanowires with forward and backward surface diffusion
- Year: 2025
- Volume: 18
- Issue: 4
- 15
- 1581
- Pages: 34-47
Spin-lattice relaxation processes of nuclear spins in GaAs:Mn
- Year: 2025
- Volume: 18
- Issue: 1.1
- 63
- 5272
- Pages: 6-10
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 3658
- Pages: 275-278
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 54
- 4377
- Pages: 62-67
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 40
- 4711
- Pages: 31-36
Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides
- Year: 2023
- Volume: 16
- Issue: 3.2
- 16
- 5281
- Pages: 130-136
Germanium polytypes formation on AlGaAs nanowire surface
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 4991
- Pages: 289-293
Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 5481
- Pages: 221-226
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 35
- 5419
- Pages: 47-52
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 50
- 5993
- Pages: 114-120
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 5987
- Pages: 341-345
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 27
- 5691
- Pages: 153-157
Experimental study of all-van-der-Waals waveguide polaritons at room temperature
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 6174
- Pages: 223-225
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 32
- 6337
- Pages: 145-149
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 36
- 6332
- Pages: 75-79
The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics
- Year: 2015
- Issue: 1
- 275
- 9625
- Pages: 158-166
The influence of natural irregularities on surface electron scattering
- Year: 2014
- Issue: 4
- 268
- 10316
- Pages: 48-54
he intervalley electron-phonon scattering in the A[III]B[V] crystal
- Year: 2009
- Issue: 2
- 0
- 10099
- Pages: 34-38
Determinations of electrokinetic properties of semiconducting materials for making nanocathods
- Year: 2011
- Issue: 4
- 2
- 9767
- Pages: 39-43
Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates
- Year: 2013
- Issue: 1
- 559
- 10485
- Pages: 24-28