Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells

The study of the luminescence properties of multiple Ge_0.53Sn_0.47/Si and Ge_0.3Si_0.56Sn_0.14/Si quantum wells allowed the energies of interband transitions between the electron Δ subband in silicon and the hole level in the quantum well to be estimated. Temperature studies revealed an initial increase in photoluminescence intensity between 8 and 30 K, followed by a decrease at higher temperatures. Approximation of the obtained results allowed the activation energies of the processes responsible for the temperature quenching of luminescence to be determined.