The study of the luminescence properties of multiple Ge0.53Sn0.47/Si and Ge0.3Si0.56Sn0.14/Si quantum wells allowed the energies of interband transitions between the electron Δ subband in silicon and the hole level in the quantum well to be estimated. Temperature studies revealed an initial increase in photoluminescence intensity between 8 and 30 K, followed by a decrease at higher temperatures. Approximation of the obtained results allowed the activation energies of the processes responsible for the temperature quenching of luminescence to be determined.