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- 2025,Volume 18Issue 4
Vyacheslav A. Timofeev
Affiliation
Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS
Novosibirsk, Russian Federation
Investigation of infrared photoresponse from structure with GeSiSn/Si multiple quantum wells
- Year: 2023
- Volume: 16
- Issue: 1.3
- 24
- 4676
- Pages: 73-78
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 50
- 3704
- Pages: 62-67
Polarized reflectance spectroscopy of aluminum nanoantennas on the surface of emitting GeSiSn/Si heterostructures
- Year: 2024
- Volume: 17
- Issue: 1.1
- 40
- 3838
- Pages: 83-88
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 68
- Pages: 45-50

