Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
Authors:
Chumanov I.V. Firsov D.D. Kolyada D.V. Komkov O.S. Skvortsov I.V. Mashanov V.I. Timofeev V.A.
Abstract:

The work demonstrates the use of photomodulation FTIR spectroscopy to study structures containing epitaxial layers of GeSn and GeSiSn in the temperature range of 79−180 K. The photoreflectance method has enabled observation of direct interband transitions, and evaluation of the impact of temperature variation and mechanical strain on their energy values.