Publication schedule
-
№1 March 2023Submission deadline: 20 January 2023
Articles by keywords "silicon"
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 1
- 138
- Pages: 311-314
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 1
- 140
- Pages: 281-284
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 0
- 145
- Pages: 260-264
Plasma deposited indium phosphide and its electrophysical properties
- Year: 2022
- Volume: 15
- Issue: 3.3
- 5
- 175
- Pages: 123-127
Investigation of degradation characteristics of photosensitive structures with porous silicon
- Year: 2022
- Volume: 15
- Issue: 3.3
- 0
- 172
- Pages: 82-85
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 2
- 153
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 3
- 178
- Pages: 54-58
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 2
- 177
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 3
- 165
- Pages: 31-35
Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 12
- 280
- Pages: 8-12
Silicon nanoantenna for controlling the polarization direction of radiation from standalone quantum light source
- Year: 2022
- Volume: 15
- Issue: 3.2
- 3
- 206
- Pages: 235-239
Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells
- Year: 2022
- Volume: 15
- Issue: 3.2
- 4
- 249
- Pages: 150-154
Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si
- Year: 2022
- Volume: 15
- Issue: 3.2
- 9
- 237
- Pages: 135-139
Study of quasi 1-D silicon nanostructures adsorption properties
- Year: 2022
- Volume: 15
- Issue: 3.2
- 15
- 292
- Pages: 10-15
Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
- Year: 2022
- Volume: 15
- Issue: 3.1
- 6
- 534
- Pages: 143-148
Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence
- Year: 2022
- Volume: 15
- Issue: 3.1
- 6
- 490
- Pages: 137-142
Structures and electrical conductance at the initial stages of magnesium growth on Si(111)-Pb surface
- Year: 2022
- Volume: 15
- Issue: 3.1
- 3
- 513
- Pages: 107-112
Morphology evolution of mesoporous silicon powder formed by Pd-assisted chemical etching at temperatures of 25 – 75 °C
- Year: 2022
- Volume: 15
- Issue: 3.1
- 5
- 529
- Pages: 93-100
Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure
- Year: 2022
- Volume: 15
- Issue: 3.1
- 9
- 526
- Pages: 32-37
Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles
- Year: 2022
- Volume: 15
- Issue: 3.1
- 24
- 591
- Pages: 16-21
Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.1
- 46
- 616
- Pages: 9-15
Optical-electric phase characteristics of silicon negative-U nanosandwiches
- Year: 2021
- Volume: 14
- Issue: 4
- 66
- 1642
- Pages: 9-20
Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons
- Year: 2020
- Volume: 13
- Issue: 3
- 42
- 3271
- Pages: 7-14
The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect
- Year: 2020
- Volume: 13
- Issue: 2
- 30
- 3149
- Pages: 17-26
The interaction processes of silicon tetrafluoride and hexafluorosilicates with hydrogen-containing and oxygenated substances: a thermodynamic analysis
- Year: 2020
- Volume: 13
- Issue: 1
- 46
- 3621
- Pages: 92-105
Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide
- Year: 2009
- Issue: 1
- 0
- 4346
- Pages: 64-71
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 28
- 4789
- Pages: 18-25
Electron and positron propagation in straight and periodically bent axial and planar silicon channels
- Year: 2015
- Issue: 3
- 358
- 4495
- Pages: 173-184
The features of the silicon gamma-ray detector amplitude spectra
- Year: 2013
- Issue: 3
- 706
- 5096
- Pages: 99-105
Photoluminescence and Raman scattering in periodic arrays of silicon nanoinclusions in zirconia dioxide
- Year: 2010
- Issue: 1
- 0
- 4370
- Pages: 71-78
A formation method of amorphous and crystalline silicon nanoclusters in dielectric films
- Year: 2010
- Issue: 1
- 0
- 4121
- Pages: 66-71
Mechanical stresses in gallium nitride films grown on substrates with a mask
- Year: 2011
- Issue: 3
- 1
- 4287
- Pages: 14-16
Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters
- Year: 2011
- Issue: 2
- 0
- 4078
- Pages: 67-74
The Frenkel pairs formation in the silicon under high energy electron and proton irradiation
- Year: 2011
- Issue: 2
- 0
- 4463
- Pages: 13-21
The blood vessel models: the technology development for makingand following investigation
- Year: 2012
- Issue: 3
- 0
- 4238
- Pages: 75-79
The features of defect formation in silicon under molecular ion bombardment
- Year: 2012
- Issue: 3
- 0
- 4489
- Pages: 64-70
An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes
- Year: 2012
- Issue: 4
- 0
- 4042
- Pages: 70-74
Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates
- Year: 2013
- Issue: 1
- 558
- 5049
- Pages: 24-28
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 656
- 5093
- Pages: 130-136