Publication schedule
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№3 September 2022Submission deadline: 20 June 2022
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№4 December 2022Submission deadline: 1 October 2022
Articles by keywords "silicon"
Optical-electric phase characteristics of silicon negative-U nanosandwiches
- Year: 2021
- Volume: 14
- Issue: 4
- 46
- 855
- Pages: 9-20
Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons
- Year: 2020
- Volume: 13
- Issue: 3
- 41
- 2471
- Pages: 7-14
The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect
- Year: 2020
- Volume: 13
- Issue: 2
- 29
- 2385
- Pages: 17-26
The interaction processes of silicon tetrafluoride and hexafluorosilicates with hydrogen-containing and oxygenated substances: a thermodynamic analysis
- Year: 2020
- Volume: 13
- Issue: 1
- 39
- 2802
- Pages: 92-105
Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide
- Year: 2009
- Issue: 1
- 0
- 3638
- Pages: 64-71
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 28
- 3947
- Pages: 18-25
Electron and positron propagation in straight and periodically bent axial and planar silicon channels
- Year: 2015
- Issue: 3
- 358
- 3756
- Pages: 173-184
The features of the silicon gamma-ray detector amplitude spectra
- Year: 2013
- Issue: 3
- 706
- 4380
- Pages: 99-105
Photoluminescence and Raman scattering in periodic arrays of silicon nanoinclusions in zirconia dioxide
- Year: 2010
- Issue: 1
- 0
- 3695
- Pages: 71-78
A formation method of amorphous and crystalline silicon nanoclusters in dielectric films
- Year: 2010
- Issue: 1
- 0
- 3431
- Pages: 66-71
Mechanical stresses in gallium nitride films grown on substrates with a mask
- Year: 2011
- Issue: 3
- 1
- 3552
- Pages: 14-16
Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters
- Year: 2011
- Issue: 2
- 0
- 3361
- Pages: 67-74
The Frenkel pairs formation in the silicon under high energy electron and proton irradiation
- Year: 2011
- Issue: 2
- 0
- 3571
- Pages: 13-21
The blood vessel models: the technology development for makingand following investigation
- Year: 2012
- Issue: 3
- 0
- 3542
- Pages: 75-79
The features of defect formation in silicon under molecular ion bombardment
- Year: 2012
- Issue: 3
- 0
- 3650
- Pages: 64-70
An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes
- Year: 2012
- Issue: 4
- 0
- 3331
- Pages: 70-74
Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates
- Year: 2013
- Issue: 1
- 558
- 4278
- Pages: 24-28
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 652
- 4386
- Pages: 130-136