Articles by keywords "silicon"

Formation of Mn4 Si7 films by magnetron sputtering and a wide range of their thermoelectric properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 5
  • 508
  • Pages: 78-88

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 2
  • 383
  • Pages: 176-181

Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 8
  • 454
  • Pages: 50-54

Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 6
  • 426
  • Pages: 39-43

Modeling of performance enhancement of the TAIGA-IACT Cherenkov gamma-ray telescope equipped with semiconductor photomultipliers

Astrophysics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 2
  • 382
  • Pages: 423-428

Development of detector cluster based on silicon photomultipliers for the Cherenkov gamma-ray telescope TAIGA-IACT

Astrophysics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 5
  • 383
  • Pages: 410-416

Kinetics of current outflow from electron-hole plasma generated in silicon detectors by relativistic heavy ions

Nuclear physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 2
  • 424
  • Pages: 295-301

Radiation hardness of silicon semiconductor detectors under irradiation with fission products of 252Cf nuclide

Nuclear physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 1
  • 390
  • Pages: 287-294

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 21
  • 503
  • Pages: 10-17

Bragg peak effect on the electrical characteristics of Si detectors irradiated with medium energy 40Ar ions

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 2
  • 427
  • Pages: 416-421

Compositions based on porous silicon and nickel oxide obtained by cooperative synthesis

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 12
  • 603
  • Pages: 393-397

Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 9
  • 528
  • Pages: 309-314

Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 6
  • 523
  • Pages: 162-166

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 6
  • 507
  • Pages: 153-157

Evolution of the crystal microstructure of hybrid SiC/Si substrates grown by the method of atomic substitution

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 7
  • 555
  • Pages: 113-118

Self-organization of the structure of porous silicon carbide under external influences

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 2
  • 495
  • Pages: 79-83

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 14
  • 518
  • Pages: 43-48

Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1
  • 14
  • 928
  • Pages: 33-50

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 955
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 999
  • Pages: 281-284

Optical studies of InP nanostructures monolithically integrated in Si (100)

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 10
  • 976
  • Pages: 260-264

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 11
  • 1108
  • Pages: 123-127

Investigation of degradation characteristics of photosensitive structures with porous silicon

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 9
  • 1041
  • Pages: 82-85

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 981
  • Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 1000
  • Pages: 54-58

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 10
  • 963
  • Pages: 36-41

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 966
  • Pages: 31-35

Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 1029
  • Pages: 8-12

Silicon nanoantenna for controlling the polarization direction of radiation from standalone quantum light source

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 5
  • 1106
  • Pages: 235-239

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 11
  • 1052
  • Pages: 150-154

Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 13
  • 983
  • Pages: 135-139

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 38
  • 1135
  • Pages: 10-15

Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 11
  • 1320
  • Pages: 143-148

Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 10
  • 1232
  • Pages: 137-142

Effect of thickness and annealing of the Si(001)2×1-Cu wetting layer on the morphology of layered nanofilms based on Fe, Co, and Cu and their ferromagnetic properties

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 15
  • 1330
  • Pages: 131-136

Structures and electrical conductance at the initial stages of magnesium growth on Si(111)-Pb surface

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 6
  • 1307
  • Pages: 107-112

Morphology evolution of mesoporous silicon powder formed by Pd-assisted chemical etching at temperatures of 25 – 75 °C

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 8
  • 1316
  • Pages: 93-100

Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 15
  • 1394
  • Pages: 32-37

Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 32
  • 1383
  • Pages: 16-21

Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 56
  • 1450
  • Pages: 9-15

Optical-electric phase characteristics of silicon negative-U nanosandwiches

Condensed matter physics
  • Year: 2021
  • Volume: 14
  • Issue: 4
  • 67
  • 2402
  • Pages: 9-20

Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons

Condensed matter physics
  • Year: 2020
  • Volume: 13
  • Issue: 3
  • 43
  • 4094
  • Pages: 7-14

The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect

Condensed matter physics
  • Year: 2020
  • Volume: 13
  • Issue: 2
  • 31
  • 3950
  • Pages: 17-26

The interaction processes of silicon tetrafluoride and hexafluorosilicates with hydrogen-containing and oxygenated substances: a thermodynamic analysis

Physical materials technology
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 52
  • 4458
  • Pages: 92-105

Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide

Condensed matter physics
  • Year: 2009
  • Issue: 1
  • 0
  • 5054
  • Pages: 64-71

Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 29
  • 5555
  • Pages: 18-25

Electron and positron propagation in straight and periodically bent axial and planar silicon channels

Theoretical physics
  • Year: 2015
  • Issue: 3
  • 358
  • 5244
  • Pages: 173-184

The features of the silicon gamma-ray detector amplitude spectra

Experimental technique and devices
  • Year: 2013
  • Issue: 3
  • 706
  • 5846
  • Pages: 99-105

Photoluminescence and Raman scattering in periodic arrays of silicon nanoinclusions in zirconia dioxide

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 5097
  • Pages: 71-78

A formation method of amorphous and crystalline silicon nanoclusters in dielectric films

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 4855
  • Pages: 66-71

Mechanical stresses in gallium nitride films grown on substrates with a mask

Condensed matter physics
  • Year: 2011
  • Issue: 3
  • 1
  • 5028
  • Pages: 14-16

Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters

Simulation of physical processes
  • Year: 2011
  • Issue: 2
  • 0
  • 4804
  • Pages: 67-74

The Frenkel pairs formation in the silicon under high energy electron and proton irradiation

Condensed matter physics
  • Year: 2011
  • Issue: 2
  • 0
  • 5175
  • Pages: 13-21

The blood vessel models: the technology development for makingand following investigation

Biophysics and medical physics
  • Year: 2012
  • Issue: 3
  • 0
  • 4978
  • Pages: 75-79

The features of defect formation in silicon under molecular ion bombardment

Physical electronics
  • Year: 2012
  • Issue: 3
  • 0
  • 5249
  • Pages: 64-70

An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes

Experimental technique and devices
  • Year: 2012
  • Issue: 4
  • 0
  • 4777
  • Pages: 70-74

Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
  • Year: 2013
  • Issue: 1
  • 559
  • 5776
  • Pages: 24-28

Improvement and stabilization of optical characteristics of the porous silicon

Physical materials technology
  • Year: 2013
  • Issue: 2
  • 659
  • 5833
  • Pages: 130-136