Publication schedule
  • №4 December 2021
    Submission deadline: 1 October 2021

Articles by keywords "silicon"

Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons

Condensed matter physics
  • Year: 2020
  • Volume: 13
  • Issue: 3
  • 40
  • 1827
  • Pages: 7-14

The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect

Condensed matter physics
  • Year: 2020
  • Volume: 13
  • Issue: 2
  • 25
  • 1779
  • Pages: 17-26

The interaction processes of silicon tetrafluoride and hexafluorosilicates with hydrogen-containing and oxygenated substances: a thermodynamic analysis

Physical materials technology
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 36
  • 2115
  • Pages: 92-105

Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide

Condensed matter physics
  • Year: 2009
  • Issue: 1
  • 0
  • 2955
  • Pages: 64-71

Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 26
  • 3205
  • Pages: 18-25

Electron and positron propagation in straight and periodically bent axial and planar silicon channels

Theoretical physics
  • Year: 2015
  • Issue: 3
  • 358
  • 3126
  • Pages: 173-184

The features of the silicon gamma-ray detector amplitude spectra

Experimental technique and devices
  • Year: 2013
  • Issue: 3
  • 706
  • 3747
  • Pages: 99-105

Photoluminescence and Raman scattering in periodic arrays of silicon nanoinclusions in zirconia dioxide

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 2991
  • Pages: 71-78

A formation method of amorphous and crystalline silicon nanoclusters in dielectric films

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 2724
  • Pages: 66-71

Mechanical stresses in gallium nitride films grown on substrates with a mask

Condensed matter physics
  • Year: 2011
  • Issue: 3
  • 1
  • 2843
  • Pages: 14-16

Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters

Simulation of physical processes
  • Year: 2011
  • Issue: 2
  • 0
  • 2708
  • Pages: 67-74

The Frenkel pairs formation in the silicon under high energy electron and proton irradiation

Condensed matter physics
  • Year: 2011
  • Issue: 2
  • 0
  • 2723
  • Pages: 13-21

The blood vessel models: the technology development for makingand following investigation

Biophysics and medical physics
  • Year: 2012
  • Issue: 3
  • 0
  • 2837
  • Pages: 75-79

The features of defect formation in silicon under molecular ion bombardment

Physical electronics
  • Year: 2012
  • Issue: 3
  • 0
  • 2853
  • Pages: 64-70

An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes

Experimental technique and devices
  • Year: 2012
  • Issue: 4
  • 0
  • 2658
  • Pages: 70-74

Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
  • Year: 2013
  • Issue: 1
  • 557
  • 3601
  • Pages: 24-28

Improvement and stabilization of optical characteristics of the porous silicon

Physical materials technology
  • Year: 2013
  • Issue: 2
  • 652
  • 3742
  • Pages: 130-136