Publication schedule
  • №1 March 2023
    Submission deadline: 20 January 2023

Articles by keywords "silicon"

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 1
  • 138
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 1
  • 140
  • Pages: 281-284

Optical studies of InP nanostructures monolithically integrated in Si (100)

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 0
  • 145
  • Pages: 260-264

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 5
  • 175
  • Pages: 123-127

Investigation of degradation characteristics of photosensitive structures with porous silicon

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 0
  • 172
  • Pages: 82-85

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 2
  • 153
  • Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 3
  • 178
  • Pages: 54-58

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 2
  • 177
  • Pages: 36-41

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 3
  • 165
  • Pages: 31-35

Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 280
  • Pages: 8-12

Silicon nanoantenna for controlling the polarization direction of radiation from standalone quantum light source

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 3
  • 206
  • Pages: 235-239

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 4
  • 249
  • Pages: 150-154

Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 9
  • 237
  • Pages: 135-139

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 15
  • 292
  • Pages: 10-15

Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 6
  • 534
  • Pages: 143-148

Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 6
  • 490
  • Pages: 137-142

Effect of thickness and annealing of the Si(001)2×1-Cu wetting layer on the morphology of layered nanofilms based on Fe, Co, and Cu and their ferromagnetic properties

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 8
  • 489
  • Pages: 131-136

Structures and electrical conductance at the initial stages of magnesium growth on Si(111)-Pb surface

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 3
  • 513
  • Pages: 107-112

Morphology evolution of mesoporous silicon powder formed by Pd-assisted chemical etching at temperatures of 25 – 75 °C

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 5
  • 529
  • Pages: 93-100

Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 9
  • 526
  • Pages: 32-37

Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 24
  • 591
  • Pages: 16-21

Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 46
  • 616
  • Pages: 9-15

Optical-electric phase characteristics of silicon negative-U nanosandwiches

Condensed matter physics
  • Year: 2021
  • Volume: 14
  • Issue: 4
  • 66
  • 1642
  • Pages: 9-20

Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons

Condensed matter physics
  • Year: 2020
  • Volume: 13
  • Issue: 3
  • 42
  • 3271
  • Pages: 7-14

The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect

Condensed matter physics
  • Year: 2020
  • Volume: 13
  • Issue: 2
  • 30
  • 3149
  • Pages: 17-26

The interaction processes of silicon tetrafluoride and hexafluorosilicates with hydrogen-containing and oxygenated substances: a thermodynamic analysis

Physical materials technology
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 46
  • 3621
  • Pages: 92-105

Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide

Condensed matter physics
  • Year: 2009
  • Issue: 1
  • 0
  • 4346
  • Pages: 64-71

Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 28
  • 4789
  • Pages: 18-25

Electron and positron propagation in straight and periodically bent axial and planar silicon channels

Theoretical physics
  • Year: 2015
  • Issue: 3
  • 358
  • 4495
  • Pages: 173-184

The features of the silicon gamma-ray detector amplitude spectra

Experimental technique and devices
  • Year: 2013
  • Issue: 3
  • 706
  • 5096
  • Pages: 99-105

Photoluminescence and Raman scattering in periodic arrays of silicon nanoinclusions in zirconia dioxide

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 4370
  • Pages: 71-78

A formation method of amorphous and crystalline silicon nanoclusters in dielectric films

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 4121
  • Pages: 66-71

Mechanical stresses in gallium nitride films grown on substrates with a mask

Condensed matter physics
  • Year: 2011
  • Issue: 3
  • 1
  • 4287
  • Pages: 14-16

Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters

Simulation of physical processes
  • Year: 2011
  • Issue: 2
  • 0
  • 4078
  • Pages: 67-74

The Frenkel pairs formation in the silicon under high energy electron and proton irradiation

Condensed matter physics
  • Year: 2011
  • Issue: 2
  • 0
  • 4463
  • Pages: 13-21

The blood vessel models: the technology development for makingand following investigation

Biophysics and medical physics
  • Year: 2012
  • Issue: 3
  • 0
  • 4238
  • Pages: 75-79

The features of defect formation in silicon under molecular ion bombardment

Physical electronics
  • Year: 2012
  • Issue: 3
  • 0
  • 4489
  • Pages: 64-70

An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes

Experimental technique and devices
  • Year: 2012
  • Issue: 4
  • 0
  • 4042
  • Pages: 70-74

Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
  • Year: 2013
  • Issue: 1
  • 558
  • 5049
  • Pages: 24-28

Improvement and stabilization of optical characteristics of the porous silicon

Physical materials technology
  • Year: 2013
  • Issue: 2
  • 656
  • 5093
  • Pages: 130-136