Latest issues
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- 2025,Volume 18Issue 4.1 Full text
- 2025,Volume 18Issue 4
Konstantin N. Galkin
Affiliation
Institute of Automation and Control Processes, Far Eastern Branch of the RAS
Publications
Orcid ID
0000-0001-5386-1013Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.1
- 84
- 6648
- Pages: 9-15
Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles
- Year: 2022
- Volume: 15
- Issue: 3.1
- 42
- 6338
- Pages: 16-21
Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p-n junction and its photoluminescence
- Year: 2022
- Volume: 15
- Issue: 3.1
- 22
- 5693
- Pages: 137-142
Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
- Year: 2022
- Volume: 15
- Issue: 3.1
- 18
- 6092
- Pages: 143-148
Ultrathin Cr and Fe monosilicides on Si (111) substrate: formation, optical and thermoelectrical properties
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 5026
- Pages: 84-89
CoSi ultrathin films on Si (111) substrate: comparison of the stage formation in ultra-high vacuum and during annealing in argon
- Year: 2024
- Volume: 17
- Issue: 3.2
- 22
- 3219
- Pages: 25-30
Si-Fe composites with embedded α-FeSi2 nanocrystals: formation and thermoelectric properties
- Year: 2025
- Volume: 18
- Issue: 4.1
- 5
- 595
- Pages: 9-14
Ca5Si3 film MBE growth on Si (111) substrate: structure and optical properties
- Year: 2025
- Volume: 18
- Issue: 4.1
- 2
- 628
- Pages: 73-78
Optical, phononic and semiconductor properties of magnesium silicide films formed on silicon by layer-by-layer (Mg+Si) reactive epitaxy
- Year: 2025
- Volume: 18
- Issue: 4.1
- 4
- 615
- Pages: 79-86
Photoelectric properties of diodes based on magnesium silicide semiconductor
- Year: 2026
- Volume: 19
- Issue: 1
- 8
- 424
- Pages: 19-29

