Latest issues
- 2026, Volume 19 Issue 1
- 2025, Volume 18 Issue 4.1 Full text
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
Nikolay G. Galkin
Affiliation
Institute of Automation and Control Processes, Far Eastern Branch of the RAS
Publications
Orcid ID
0000-0003-4127-2988
Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.1
- 83
- 6423
- Pages: 9-15
Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles
- Year: 2022
- Volume: 15
- Issue: 3.1
- 42
- 6137
- Pages: 16-21
Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p-n junction and its photoluminescence
- Year: 2022
- Volume: 15
- Issue: 3.1
- 20
- 5506
- Pages: 137-142
Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
- Year: 2022
- Volume: 15
- Issue: 3.1
- 18
- 5916
- Pages: 143-148
Ultrathin Cr and Fe monosilicides on Si (111) substrate: formation, optical and thermoelectrical properties
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 4829
- Pages: 84-89
Mg2Si film on Si (111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties
- Year: 2023
- Volume: 16
- Issue: 3.1
- 56
- 5400
- Pages: 106-111
CoSi ultrathin films on Si (111) substrate: comparison of the stage formation in ultra-high vacuum and during annealing in argon
- Year: 2024
- Volume: 17
- Issue: 3.2
- 20
- 3013
- Pages: 25-30
Mg2Si synthesis on silicon crystals with different aspect ratio
- Year: 2024
- Volume: 17
- Issue: 3.2
- 23
- 2839
- Pages: 31-35
Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires
- Year: 2024
- Volume: 17
- Issue: 3.2
- 10
- 2796
- Pages: 107-111
Influence of the growth regime on the transport properties of doped Mg2Si films
- Year: 2025
- Volume: 18
- Issue: 3.1
- 2
- 589
- Pages: 40-43
Si-based photodetector with an Mg2Si contact layer for SWIR range
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 519
- Pages: 53-58
Si-Fe composites with embedded α-FeSi2 nanocrystals: formation and thermoelectric properties
- Year: 2025
- Volume: 18
- Issue: 4.1
- 5
- 385
- Pages: 9-14
Ca5Si3 film MBE growth on Si (111) substrate: structure and optical properties
- Year: 2025
- Volume: 18
- Issue: 4.1
- 1
- 404
- Pages: 73-78
Optical, phononic and semiconductor properties of magnesium silicide films formed on silicon by layer-by-layer (Mg+Si) reactive epitaxy
- Year: 2025
- Volume: 18
- Issue: 4.1
- 3
- 396
- Pages: 79-86
Photoelectric properties of diodes based on magnesium silicide semiconductor
- Year: 2026
- Volume: 19
- Issue: 1
- 7
- 206
- Pages: 19-29