Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters

Simulation of physical processes

Characteristics of sputtering of the cubic silicon carbide (111) surface under low-energy bombardment by Si[N] and C[N]ions and clusters (TV =1 — 60) have been presented. An analysis of the correlations between non-additive increase of the sputtering yields and the features of the collision cascade in the target versus the incident cluster size and energy was carried out.