Latest issues
- 2026,Volume 19Issue 1.1 Full text
- 2026,Volume 19Issue 1
- 2025,Volume 18Issue 4.1 Full text
- 2025,Volume 18Issue 4
The Frenkel pairs formation in the silicon under high energy electron and proton irradiation
- Year: 2011
- Issue: 2
- 0
- 9841
- Pages: 13-21
Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide
- Year: 2009
- Issue: 1
- 0
- 9262
- Pages: 64-71
Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons
- Year: 2020
- Volume: 13
- Issue: 3
- 45
- 9140
- Pages: 7-14
The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range
- Year: 2024
- Volume: 17
- Issue: 1
- 65
- 4963
- Pages: 9-20

