Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer

In this work, we study the morphology, composition and optical properties of AlGaN epilayers grown by plasma-assisted molecular beam epitaxy on the AlN buffer layer which was performed on regular Si substrate and compliant Si substrate with a preformed buffer porous silicon layer (por-Si) and carbonized porous layer(SiC/por-Si). The AlGaN layers formed on the por-Si buffer revealed a 15% higher intensity of photoluminescence spectra in visible range in comparison with ones formed on regular Si substrate.