Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
Authors:
Lendyashova Vera V. Kryzhanovskaya Natalia V. Cirlin George E. Shugabaev Talgat M. Gridchin Vladislav O. Reznik Rodion R. Khrebtov Artem I. Melnichenko Ivan A. Kulagina Anastasia S. Kotlyar Konstantin P.
Abstract:

In this work, we propose a simple method to enhance the photoluminescence of InGaN nanowires using CdSe/ZnS colloidal quantum dots. It is found that decoration the surface of InGaN NWs with QDs leads to an increase in the integral and peak photoluminescence intensity by more than 3 times. The observed enhancement is attributed to the nonradiative energy transfer between quantum dots and nanowires.