Articles by keywords "AlGaN"
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 4
- 326
- Pages: 249-254
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 3
- 346
- Pages: 223-227
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 410
- Pages: 449-453
Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content
- Year: 2023
- Volume: 16
- Issue: 1.3
- 13
- 940
- Pages: 182-187
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 20
- 1232
- Pages: 170-175
Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm
- Year: 2023
- Volume: 16
- Issue: 1.3
- 12
- 956
- Pages: 85-89
2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance
- Year: 2023
- Volume: 16
- Issue: 1.1
- 13
- 1018
- Pages: 380-384
AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor
- Year: 2009
- Issue: 1
- 0
- 5506
- Pages: 43-48
Ultraviolet photodiodes on the basis of the contactsof metal and aluminum-nitride gallium solid solutions
- Year: 2012
- Issue: 3
- 0
- 5848
- Pages: 28-31
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 5310
- Pages: 28-31