Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique

This paper reports on the development of direct bonding of 3C-SiC epitaxial layers grown by chemical vapor deposition on silicon substrates and 6H-SiC single crystal wafers. It has been found that the bonding temperature is a  critical parameter to obtain mechanical contact between the transferred 3C-SiC layers and the 6H-SiC carrier plates. The results of structural characterization showed that the structure of epitaxial layers grown by sublimation on  bonded substrates corresponds to a pure cubic phase of high quality.