Articles by keywords "Silicon carbide"
The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range
- Year: 2024
- Volume: 17
- Issue: 1
- 12
- 324
- Pages: 9-20
Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 1283
- Pages: 39-43
Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup
- Year: 2023
- Volume: 16
- Issue: 1.1
- 21
- 1374
- Pages: 309-314
Evolution of the crystal microstructure of hybrid SiC/Si substrates grown by the method of atomic substitution
- Year: 2023
- Volume: 16
- Issue: 1.1
- 10
- 1332
- Pages: 113-118
Self-organization of the structure of porous silicon carbide under external influences
- Year: 2023
- Volume: 16
- Issue: 1.1
- 6
- 1293
- Pages: 79-83
Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide
- Year: 2009
- Issue: 1
- 0
- 5748
- Pages: 64-71
Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters
- Year: 2011
- Issue: 2
- 0
- 5509
- Pages: 67-74