Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup

An approach is presented to optimizing the growth of graphene on silicon carbide (SiC) substrates by using numerical simulation methods. The presented models in axisymmetric approximation show good convergence with  experimental results and allow the studies of temperature fields inside closed growth cells. It is concluded that the use of numerical calculation methods is promising for optimizing the design of a technological setup for graphene  growth by sublimation of the SiC surface.