SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
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    Year: 2025
    Volume: 18
    Issue: 1.1
    Pages: 159
    629
    111826
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    Spin-lattice relaxation processes of nuclear spins in GaAs: Mn

    Bulk properties of semiconductors
    Berdnikov V.S.Kavokin K.V.Kuznetsova M.S.Litvyak V.MBazhin P.S.
    • 59
    • 4743
    • Pages: 6-10

    Non-ideal experimental Berry phase in the topological insulator Bi2Se3 single crystal

    Bulk properties of semiconductors
    Fominykh B.M.Irkhin V.Yu.Perevalova A.N.Naumov S.V.Marchenkov V.V.
    • 38
    • 4714
    • Pages: 11-16

    Epitaxial growth AlGaAs from Bi-containing melts

    Structure growth, surface, and interfaces
    Khvostikova O.A.Kornienko P.D.Khvostikov V.P.Salii R.A.
    • 18
    • 4527
    • Pages: 17-21

    Nanostructured engineering of ZnO: Cu:Al nanomaterials for sensor and photocatalytic applications

    Structure growth, surface, and interfaces
    Yakushova N.D.Filippov I.A.Karmanov A.A.Gubich I.A.Pronin I.A.
    • 15
    • 4401
    • Pages: 22-27

    Frontal surface passivation of the photovoltaic converter based on narrow-band materials

    Structure growth, surface, and interfaces
    Sorokina S.V.Khvostikova O.A.Kornienko P.D.Khvostikov V.P.
    • 17
    • 4466
    • Pages: 28-33

    Optical characteristics of Hg0.7Cd0.3Te films with etched graded-gap surface layer

    Structure growth, surface, and interfaces
    Ruzhevich M.S.Mynbaev K.D.Firsov D.D.Chumanov I.V.Komkov O.S.Varavin V.S.Yakushev M.V.
    • 27
    • 4248
    • Pages: 34-39

    Structural and electrophysical properties of barium titanate epitaxial films

    Structure growth, surface, and interfaces
    Ladanova J.A.Zagorodneva V.N.Dvortsova P.A.Suturin S.M.Fedorov V.V.Ustinov A. B.Sakharov V.I.Sokolov N.S.
    • 22
    • 4453
    • Pages: 40-45

    Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

    Heterostructures, superlattices, quantum wells
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Nikitina E.V.Tsatsulnikov A.F.
    • 24
    • 4277
    • Pages: 46-51

    Magnetic field effect on interface states in ZnSe/BeTe quantum well structures with no common atom

    Heterostructures, superlattices, quantum wells
    Zedomi T.E.Belova D.D.Kotova L.V.Kochereshko V.P.
    • 8
    • 4279
    • Pages: 52-57

    Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface

    Heterostructures, superlattices, quantum wells
    Melentyev G.A.Vinnichenko M.Ya.Karaulov D.A.Firsov D.A.
    • 23
    • 4351
    • Pages: 58-66

    Effect of illumination on positive magnetoresistance of high-mobility two-dimensional electron gas in GaAs/AlAs heterostructure

    Heterostructures, superlattices, quantum wells
    Betke I.A.Strygin I.S.Kolosovsky E.A.Bykov A.A.
    • 12
    • 4201
    • Pages: 67-71

    Analysis of charge transport in a tunnel junction based on magnetic insulator CrCl3

    Heterostructures, superlattices, quantum wells
    Bakhmetiev M.V.Chiglintsev E.Barulina E.Y.Shevyakova K.V.Morozov A.D.Kleshch V.I.Chernov A.
    • 22
    • 4351
    • Pages: 72-76

    Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Kozko I.A.Karaseva E.P.Svinkin N.А.Rider М.А.Vyacheslavova E.A.Gridchin V.O.Fedorov V.V.Kondratev V.M.Bolshakov A.D.
    • 14
    • 4173
    • Pages: 77-82

    Polarized Raman scattering in strained GaN nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Sharov V.A.
    • 10
    • 4085
    • Pages: 83-87

    Impact of geometry on semiconductor quantum dots optical properties

    Quantum wires, quantum dots, and other low-dimensional systems
    Avetisyan A.H.Vinnichenko M.Ya.Hakobyan E.S.
    • 16
    • 4029
    • Pages: 88-94

    Narrow-band fluorescence of silicon-vacancy color centers in nanodiamonds placed in ring microresonator

    Quantum wires, quantum dots, and other low-dimensional systems
    Zhivopistsev А.А.Romshin A.M.Pasternak D.G.Kalashnikov D.Bagramov R.Kh.Filonenko V.P.Vlasov I.I.
    • 18
    • 4428
    • Pages: 95-99

    Near-UV detectors based on ultrathin GaN epitaxial layers

    Optoelectronic and nanoelectronic devices
    Shubina K.Yu.Sinitskaya O.A.Enns Ya.B.Mizerov A.M.Nikitina E.V.
    • 16
    • 4236
    • Pages: 100-104

    Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

    Optoelectronic and nanoelectronic devices
    Kirilenko I.D.Ruzhevich M.S.Romanov V.V.Moiseev K.D.Dorogov M.V.Tomkovich M.V.Firsov D.D.Chumanov I.V.Komkov O.S.Mynbaev K.D.
    • 24
    • 4129
    • Pages: 105-110

    Optimizing the front contact grid parameters of рhotovoltaic laser power converters

    Optoelectronic and nanoelectronic devices
    Malevskaya A.D.Mintairov M.A.Evstropov V.V.Malevskiy D.A.Malevskaya A.V.Kalyuzhniy N.A.
    • 15
    • 4117
    • Pages: 111-116

    Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

    Optoelectronic and nanoelectronic devices
    Gladyshev A.G.Andryushkin V.V.Kovach Ya.N.Babichev A.V.Voropaev K.O.Egorov A.Yu.Karachinsky L.Ya.
    • 22
    • 4165
    • Pages: 117-121

    WOx/WS2 nanocomposites for room temperature gas sensors

    Optoelectronic and nanoelectronic devices
    Zyryanova O.D.Nalimova S.S. Kondratev V.M.Bui C.D.Moshnikov V.A.
    • 19
    • 4260
    • Pages: 122-127

    Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs

    Optoelectronic and nanoelectronic devices
    Kovach Ya.N.Blokhin S.A.Bobrov M.A.Blokhin A.A.Maleev N.A.Vasil’ev A.P.
    • 9
    • 4206
    • Pages: 128-133

    Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

    Optoelectronic and nanoelectronic devices
    Cheng Y.Kamaev G.N.Popov A.A.Volodin V.A.
    • 9
    • 4111
    • Pages: 134-139

    Dependence of static and dynamic characteristics of high-voltage pulsed p-i-n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Pugovkin A.A.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • 7
    • 4253
    • Pages: 140-144

    Silicon nanowire based sensorics of acids and bases

    Optoelectronic and nanoelectronic devices
    Svinkin N.А.Kondratev V.M.Polozkov R.G.Novikova K.N.Zubov Fedor I.Mozharov A.M.Bolshakov A.D.
    • 20
    • 4337
    • Pages: 145-151

    Study of resonator optical properties of perylene microcrystals

    Novel materials
    Smirnov K.A.Zhaboev E.I.Mitetelo N.V.Maydykovskiy A.I.Murzina T.V.
    • 19
    • 4286
    • Pages: 152-157