Magnetic field effect on interface states in ZnSe/BeTe quantum well structures with no common atom

Photoluminescence (PL) spectra of type-II ZnSe/BeTe quantum wells with no common atom at interfaces were investigated under magnetic fields up to 45 T, focusing on the regions of direct and indirect interband optical transitions. Interface carrier states were observed in indirect transition spectral regions. Diamagnetic shift constants and g-factors were extracted, allowing to calculate state localization on the interface plane. As the magnetic field increased, a relative redistribution of indirect and interface exciton PL line intensities was found. This redistribution can be explained by blocking interface state population channels through the BeTe layer. A model describing the dependence of PL intensities on magnetic field was developed and found to fit experimental data well.