Nicolai A. Maleev
Nicolai A. Maleev
Affiliation
Ioffe Institute
St. Petersburg, Russian Federation
Publications

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 29
  • 4809
  • Pages: 352-356

Vertical-cavity surface-emitting lasers for compact atomic sensors

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 33
  • 5192
  • Pages: 16-22

Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 38
  • 5095
  • Pages: 9-15

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 21
  • 5100
  • Pages: 50-55

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 26
  • 4124
  • Pages: 165-170

Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 9
  • 4097
  • Pages: 128-133

1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 48
  • 5465
  • Pages: 456-462

Room temperature microlasers based on quasi-planar geometry

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 5
  • 227
  • Pages: 98-104

Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 0
  • 220
  • Pages: 105-110