Nicolai A. Maleev
Nicolai A. Maleev
Affiliation
Ioffe Institute
St. Petersburg, Russian Federation
Publications

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 32
  • 5268
  • Pages: 352-356

Vertical-cavity surface-emitting lasers for compact atomic sensors

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 35
  • 5646
  • Pages: 16-22

Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 39
  • 5551
  • Pages: 9-15

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 23
  • 5553
  • Pages: 50-55

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 27
  • 4618
  • Pages: 165-170

Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 10
  • 4550
  • Pages: 128-133

1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 48
  • 5929
  • Pages: 456-462

Room temperature microlasers based on quasi-planar geometry

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 10
  • 711
  • Pages: 98-104

Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 4
  • 767
  • Pages: 105-110