Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
Authors:
Novikov Innokenty I. Babichev Andrei V. Nadtochiy Alexey M. Tkach Yulia S. Kryzhanovskaya Natalia V. Blokhin Sergei A. Nevedomskiy Vladimir N. Gladyshev Andrey G. Maleev Nicolai A. Karachinsky Leonid Ya.
Abstract:

The comparative studies of optical and structural properties of InGaAs/GaAs quantum dots grown in Stranski–Krastanov growth mode by molecular-beam epitaxy and metal-organic chemical vapor deposition is presented. An analysis of the photoluminescence at ultralow pump levels resulted that the quantum dots ensemble grown by metal-organic chemical vapor deposition exhibits photoluminescence corresponding to quantum dots ground state and at the same time ensemble of quantum dots grown by molecular-beam epitaxy demonstrates the bimodal behavior which can be explained by the presence of two characteristic ensembles of InGaAs/GaAs quantum dots with different sizes and different peaks of photoluminescence. The results on InGaAs/GaAs quantum dots studying by transmission electron microscopy are presented and discussed as well.