SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
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    Articles by keywords "gallium arsenide"

    Room temperature microlasers based on quasi-planar geometry

    Optoelectronic and nanoelectronic devices
    Babichev A.V.Kovach Ya.N.Dragunova A.S.Makhov I.S.Kryzhanovskaya N.V.Zadiranov Y. M.Salii Yu.A.Kulagina M.M.Bobrov M.A.Vasil’ev A.P.Blokhin S.A.Maleev N.A.Karachinsky L.Ya.Novikov I.I.Egorov A.Yu.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 12
    • 836
    • Pages: 98-104

    Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

    Bulk properties of semiconductors
    Berdnikov V.S.Kavokin K.V.Kuznetsova M.S.Litvyak V.MBazhin P.S.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 63
    • 5272
    • Pages: 6-10

    Numerical optimization of semiconductor waveguide structure

    Simulation of physical processes
    Kostromin N.A.Dashkov A.S.Barykin D.A.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 14
    • 3441
    • Pages: 98-102

    Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors

    Physical optics
    Babichev A.V.Papylev D.S.Komarov S.D.Kryzhanovskaya N.V.Blokhin S.A.Nevedomskiy V.N.Gladyshev A.G.Karachinsky L.Ya.Novikov I.I.Egorov A.Yu.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 25
    • 4024
    • Pages: 233-237

    Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 21
    • 3847
    • Pages: 28-33

    Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping

    Heterostructures, superlattices, quantum wells
    Adamov R.B.Melentyev G.A.Podoskin A.A.Slipchenko S.O.Sedova I.V.Sorokin S.V.Makhov I.S.Firsov D.A.Shalygin V.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 27
    • 4916
    • Pages: 68-76

    Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

    Bulk properties of semiconductors
    Berdnikov V.S.Kuznetsova M.S.Kavokin K.V.Dzhioev R.I.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 40
    • 4711
    • Pages: 31-36

    Features of isovalent doping of gallium arsenide with bismuth ions

    Bulk properties of semiconductors
    Zdoroveyshchev D.A.Vikhrova O.V.Danilov Yu.A.Dudin Yu.A.Zdoroveyshchev A.V.Parafin A.E.Drozdov M.N.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 22
    • 4995
    • Pages: 20-24

    Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

    Physical optics
    Babichev A.V.Nadtochiy A.M.Tkach Yu.S.Kryzhanovskaya N.V.Blokhin S.A.Nevedomskiy V.N.Gladyshev A.G.Maleev N.A.Karachinsky L.Ya.Novikov I.I.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 23
    • 5676
    • Pages: 50-55

    Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 18
    • 5427
    • Pages: 79-83

    Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

    Condensed matter physics
    Kirichenko D.V.Chernenko N.E.Shandyba N.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 27
    • 5381
    • Pages: 74-78

    Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

    Condensed matter physics
    Lakhina E.A.Shandyba N.A.Chernenko N.E.Kirichenko D.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 40
    • 5982
    • Pages: 53-58

    Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

    Bulk properties of semiconductors
    Petruk A.D.Kharin N.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 43
    • 5435
    • Pages: 14-19

    Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

    Condensed matter physics
    Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 25
    • 6199
    • Pages: 54-58

    Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Eremenko M.M.Balakirev S.V.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 16
    • 6376
    • Pages: 36-41