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Self-organization of the structure of porous silicon carbide under external influences
- Year: 2023
- Volume: 16
- Issue: 1.1
- 13
- 5106
- Pages: 79-83
Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 5532
- Pages: 309-314
Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique
- Year: 2023
- Volume: 16
- Issue: 1.3
- 43
- 5002
- Pages: 39-43

