SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
    Version for the visually impaired
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    Year: 2023
    Volume: 16
    Issue: 1.3
    Pages: 193
    1141
    164410
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    Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model

    Bulk properties of semiconductors
    Bogoslovskiy N.A.Petrov P.V.Averkiev N.S.
    • 50
    • 5072
    • Pages: 7-13

    Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

    Bulk properties of semiconductors
    Petruk A.D.Kharin N.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • 42
    • 4996
    • Pages: 14-19

    Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy

    Bulk properties of semiconductors
    Litvyak V.MCherbunin R.V.Soldatenkov F.Yu.Kalevich V.K.Kavokin K.V.
    • 35
    • 5662
    • Pages: 20-25

    Magnetoresistivity and Hall effect in Weyl semimetal WTe2

    Bulk properties of semiconductors
    Perevalova A.N.Fominykh B.M.Chistyakov V.V.Naumov S.V.Neverov V.N.Marchenkov V.V.
    • 111
    • 5849
    • Pages: 26-32

    Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

    Bulk properties of semiconductors
    Osinnykh I.V.Malin T.V.Zhuravlev K.V.
    • 24
    • 5372
    • Pages: 33-38

    Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique

    Structure growth, surface, and interfaces
    Amelchuk D.G.Mynbaeva M.G.Smirnov A.N.Davydov V.Yu.Lebedev S.P.Lebedev A.A.
    • 43
    • 5215
    • Pages: 39-43

    Improved polymer residuals removing after the graphene transfer to enhance sensors performance

    Structure growth, surface, and interfaces
    Barsukov L.A.Nekrasov N.P.Romashkin A.V.Bobrinetskiy I.I.Levin D.D.Nevolin V.K.
    • 65
    • 5427
    • Pages: 44-49

    Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

    Structure growth, surface, and interfaces
    Kelner O.A.Tsatsulnikov A.F.Nikolaev A.E.Zavarin E.E.
    • 35
    • 5085
    • Pages: 50-54

    Formation and magnetic properties of ultrathin cobalt silicides films on Si surface

    Structure growth, surface, and interfaces
    Monyak A.A.Grebenyuk G.S.Lobanova E.Yu.Kuzmin V.
    • 50
    • 5330
    • Pages: 55-61

    Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling

    Structure growth, surface, and interfaces
    Maidebura Y.Malin T.V.Zhuravlev K.V.
    • 21
    • 4998
    • Pages: 62-66

    Magneto-intersuband resistance oscillations in a one-dimensional lateral superlattice

    Heterostructures, superlattices, quantum wells
    Strygin I.S.Bykov A.A.
    • 25
    • 4794
    • Pages: 67-72

    Investigation of infrared photoresponse from structure with GeSiSn/Si multiple quantum wells

    Heterostructures, superlattices, quantum wells
    Timofeev V.A.Mashanov V.I.Nikiforov A.I.Skvortsov I.V.Bloshkin А.А.Loshkarev I.D.Azarov I.A.Kirienko V.V.
    • 24
    • 4848
    • Pages: 73-78

    Modeling of coherent dynamics of excitons in a GaAs quantum well in the pump-probe experiment

    Heterostructures, superlattices, quantum wells
    Sultanov O.Sh.Yugova I.A.Mikhailov A.V.
    • 23
    • 4915
    • Pages: 79-84

    Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm

    Heterostructures, superlattices, quantum wells
    Talnishnikh Nadezhda A.Ivanov A.E.Shabunina E.I.Shmidt N.P.
    • 18
    • 4992
    • Pages: 85-89

    Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

    Heterostructures, superlattices, quantum wells
    Kiianitsyn S.Yu.Baranov A.I.Uvarov A.V.Maksimova A.A.Vyacheslavova E.A.Gudovskikh A.S.
    • 19
    • 4866
    • Pages: 90-95

    Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures

    Quantum wires, quantum dots, and other low-dimensional systems
    Leshchenko E.D.Dubrovskii V.G.
    • 16
    • 4799
    • Pages: 96-100

    Interband photoluminescence of InAs (P)/Si nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Ustimenko R.V.Vinnichenko M.Ya.Karaulov D.A.Firsov D.A.Fedorov V.V.Mozharov A.M.Kirilenko D.A.Mukhin I.S.
    • 35
    • 5226
    • Pages: 101-107

    High-field terahertz time-domain spectroscopy of single-walled carbon nanotubes

    Quantum wires, quantum dots, and other low-dimensional systems
    Burdanova M.G.Chiglintsev E.Paukov M.I.Mishra P.Brekhov K.Arsenin А.V.Volkov V.S.Chernov A.
    • 28
    • 5037
    • Pages: 108-111

    Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K

    Quantum wires, quantum dots, and other low-dimensional systems
    Afanasev K.M.Lebedev D.V.Vlasov A.S.Balunov P.A.Mintairov A.M.
    • 17
    • 5015
    • Pages: 112-116

    Electrically controlled switching between spatially separated conducting channels in a quantum point contact

    Quantum wires, quantum dots, and other low-dimensional systems
    Sarypov D.I.Pokhabov D.A.Pogosov A.G.Zhdanov E.Yu.Bakarov A.K.
    • 29
    • 5236
    • Pages: 117-123

    Influence of DC current direction in graphene on dispersion and amplification of plasmons in graphene

    Quantum wires, quantum dots, and other low-dimensional systems
    Moiseenko I.M.Fateev D.V.
    • 14
    • 5024
    • Pages: 124-127

    Study of composite structure based on Ag and SiNWs

    Quantum wires, quantum dots, and other low-dimensional systems
    Bolshakov V.O.Ermina A.A.Prigoda K.V.Maximov M.Yu.Tolmachev V.A.Zharova Yu.A.
    • 23
    • 5071
    • Pages: 128-134

    Enhancing single-photon emission of silicon-vacancy centers in nanodiamonds by a gold film

    Quantum wires, quantum dots, and other low-dimensional systems
    Romshin A.M.Gritsienko A.V.Ilin A.S.Bagramov R.Kh.Filonenko V.P.Vitukhnovsky A.G.Vlasov I.I.
    • 48
    • 4915
    • Pages: 135-139

    Polarimetry of waveguiding heterostructures with quantum well-dots

    Quantum wires, quantum dots, and other low-dimensional systems
    Kharchenko A.A.Nadtochiy A.M.Mintairov S.A.Kalyuzhniy N.A.Maximov M.V.
    • 12
    • 4923
    • Pages: 140-145

    Stretchable carbon-nanotube films as opto-mechanically controllable modulators of terahertz radiation

    Optoelectronic and nanoelectronic devices
    Paukov M.I.Starchenko V.V.Krasnikov D.V.Zhukov S.S.Gorshunov B.P.Nasibulin A.G.Arsenin А.V.Volkov V.S.
    • 10
    • 5283
    • Pages: 146-150

    Optically controlled memristor based on ZrO2 (Y) film with Au nanoparticles

    Optoelectronic and nanoelectronic devices
    Ryabova M.A.Filatov D.O.Novikov A.S.Shenina M.E.Antonov I.N.Kotomina V.E.Liskin D.A.Ershov A.V.Gorshkov O.N.
    • 39
    • 5632
    • Pages: 151-156

    Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

    Optoelectronic and nanoelectronic devices
    Karaborchev A.A.Makhov I.S.Maximov M.V.Kryzhanovskaya N.V.Zhukov A.E.
    • 26
    • 5055
    • Pages: 157-162

    1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

    Optoelectronic and nanoelectronic devices
    Kovach Ya.N.Blokhin S.A.Babichev A.V.Bobrov M.A.Blokhin A.A.Gladyshev A.G.Novikov I.I.Karachinsky L.Ya.Voropaev K.O.Egorov A.Yu.
    • 22
    • 4956
    • Pages: 163-169

    Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

    Optoelectronic and nanoelectronic devices
    Ivanov A.E.Talnishnikh Nadezhda A.Chernyakov A.E.Zakgeim A.L.
    • 29
    • 5285
    • Pages: 170-175

    Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

    Optoelectronic and nanoelectronic devices
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • 11
    • 5190
    • Pages: 176-181

    Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content

    Novel materials
    Semenov A.Nechaev D.Berezina D.Guseva Yu.A.Kulagina M.M.Smirnova I.P.Zadiranov Y. M.Troshkov S.Shmidt N.P.
    • 30
    • 4965
    • Pages: 182-187

    Switchable supercavity modes in metasurfaces based on phase change materials

    Novel materials
    Kutuzova A.A.Rybin M.V.
    • 28
    • 5385
    • Pages: 188-191