Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology

In this work, we study the influence of the substrate temperature on the structural and optical properties of InGaN nanostructures synthesized by plasma-assisted molecular beam epitaxy. We show that ternary InGaN alloys with a chemical composition within the miscibility gap can be synthesized under N-rich growth conditions at the substrate temperatures from 600 to 670 °C. The results can be used to create visible and white light-emitting diodes on Si