SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal - Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles by keywords "InGaN"

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
Shugabaev T.M. Gridchin V.O. Reznik R.R. Khrebtov A.I. Melnichenko I.A. Kulagina A.S. Kotlyar K.P. Lendyashova V.V. Kryzhanovskaya N.V. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 3
  • 529
  • Pages: 255-260

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Reznik R.R. Kirilenko D.A. Baranov A.I. Dragunova A.S. Kryzhanovskaya N.V. Maksimova A.A. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 37
  • 1351
  • Pages: 179-184

Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs

Physical electronics
Shabunina E.I. Ivanov A.E. Talnishnikh Nadezhda A. Kartashova A.P. Poloskin D.S. Shmidt N.P. Zakgeim A.L. Chernyakov A.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 17
  • 1354
  • Pages: 70-76

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
Gridchin V.O. Reznik R.R. Kotlyar K.P. Shugabaev T.M. Dragunova A.S. Kryzhanovskaya N.V. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 1672
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Baranov A.I. Maksimova A.A. Reznik R.R. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 25
  • 1721
  • Pages: 281-284

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
Arteev D.S. Sakharov A.V. Nikolaev A.E. Zavarin E.E. Tsatsulnikov A.F. Ustinov V.M.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 17
  • 1910
  • Pages: 21-24

Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes

Experimental technique and devices
Basalkevich T.M. Talnishnikh Nadezhda A. Shmidt N.P.
  • Year: 2012
  • Issue: 3
  • 0
  • 5634
  • Pages: 45-48

Degradation phenomena and the problem of semiconductor light emitting sources reliability

Experimental technique and devices
Sidorov V.G. Shmidt N.P.
  • Year: 2013
  • Issue: 2
  • 5
  • 5352
  • Pages: 71-80