Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes

Experimental technique and devices
Authors:
Basalkevich Tatiana M. Talnishnikh N.A. Shmidt Natalia P.
Abstract:

The paper describes the features of degradation processes, the current-voltage characteristics, electroluminescence spectra and external quantum efficiency. The reasons for the rapid development of degradation processes in high-power blue InGaN /GaN light-emitting diodes, complicating the prediction of their service life, are elucidated.