Degradation phenomena and the problem of semiconductor light emitting sources reliability

Experimental technique and devices
Authors:
Sidorov Valery G. Shmidt Natalia P.
Abstract:

The degradation mechanisms in light emitting sources based on A3B5 semiconductors and also the peculiarities of degradation processes in light emitting sources based on InGaN/GaN structures have been reviewed. The problem of semiconductor light emitting sources reliability have been analyzed.