Optical-electric phase characteristics of silicon negative-U nanosandwiches

In order to determine the possibility of the phase control of terahertz (THz) radiation from silicon negative-U nanosandwich structures (NSS), as well as to describe the relationship of optical and electrical characteristics of these NSS, the room-temperature measurement of modulated electroluminescence spectra have been carried out. In so doing, the opportunity to adjust a frequency, an amplitude and a phase of THz radiation was found; the longitudinal conductance phase characteristics of the edge channels of the NSS were recorded at high temperature (up to room one). The physical processes underlying the observed phenomena were analyzed. The edge channels’ cooling effect as a contributory factor for observation of the high-temperature macroscopic quantum phenomena arised due to the strong exchange interaction between the charge carriers in the edge channels and the dipole boron centers with negative correlation energy (negative-U reaction). The explanation of the observed phenomena using the quantum Faraday effect made it possible to apply the NSS as a component base for the silicon radiophotonics.