Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals

Simulation of physical processes

In the paper, the simulation results on propagation of high-energy charged particles in the bent crystalline (Si and Ge) media have been presented within the atomistic approach. The calculation results were compared with literary experimental data obtained by measuring the output angular distribution of 855 MeV electrons with their very low initial divergence. Moreover, the literary experimental data on output radiation spectra for short bent Si and Ge crystals with different bending radii were taken into account. A good agreement between all the results was found.