Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

In this work, we have studied the physical properties of InGaAs quantum dots (QDs) in AlGaAs nanowires (NWs) synthesized on silicon at different temperatures. The results of the studies have shown that, a decrease in the growth temperature leads to an increase in the mole fraction of indium in the InGaAs QD solid solution. In this case, the number of defects in QDs increases significantly due to an increase in the mismatch in the crystal lattices parameters of NWs and QDs.