Improvement and stabilization of optical characteristics of the porous silicon

The procedure for stabilization of optical characteristics of porous silicon made by electrochemical anodic oxidation has been presented. The photoluminescence spectra and Raman scattering of porous silicon films were analyzed. The best optical performance was found to achieve by making samples in electrolyte containing an aqueous solution of KMnO4 and without illumination of a silicon wafer.