Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

doi:10.18721/JPM.161.157

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures

Authors:

Ilkiv I.V.Kotlyar K.P.Kirilenko D.A.Sharov V.A.Reznik R.R.Cirlin G.E.

Abstract:

Germanium nanocrystals were grown on GaN nanowire sidewalls by molecular beam epitaxy. The transmission electron microscopy measurements revealed the formation of 6−10 nm in size Ge quantum dots, which exhibited diamond cubic crystal structure. Raman spectroscopy indicate that uncapped Ge QDs are stress relaxed compared to ones additionally capped with GaN.