SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
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    Articles by keywords "molecular beam epitaxy"

    The influence of Ar+and Cd+ ion implantation on the composition and electronic structure of monocrystalline zinc telluride

    Physical electronics
    Khujaniyozov J. B.Umirzakov B.Y.Tashmukhamedova D.A.Loboda V.V.Abduvayitov A. A.
    • Year: 2026
    • Volume: 19
    • Issue: 2
    • 8
    • 489
    • Pages: 84-97

    Heterostructures with ultrathin InxGa1−xAs/GaAs(001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy

    Heterostructures, superlattices, quantum wells
    Lakuntsova O.E.Klimko G.V.Sedova I.V.Myasoedov A.V.Semenov A.Prasolov N.D.Sorokin S.V.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 12
    • 741
    • Pages: 39-44

    MBE growth of GaAs nanowires with a silicon rich particle on the top

    Condensed matter physics
    Sibirev N.V.Ilkiv I.V.Ubyivovk E.V.Soshnikov I.P.Shtrom I.V.Reznik R.R.Brukhanova V.V.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 4.1
    • 12
    • 1189
    • Pages: 62-66

    Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire

    Condensed matter physics
    Subbotina E.A.Subbotina A.S.Serov A.Yu.Filosofov N.G.Gridchin V.O.Sibirev N.V.Cirlin G.E.Shtrom I.V.
    • Year: 2025
    • Volume: 18
    • Issue: 4.1
    • 8
    • 1207
    • Pages: 44-48

    Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles

    Physical electronics
    Barantsev O.V.Vasilkova E.I.Pirogov E.V.Dementev P.A.Nevedomskiy V.N.Karachinsky L.Ya.Novikov I.I.Sobolev M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 15
    • 1229
    • Pages: 172-177

    Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces

    Atom physics and physics of clusters and nanostructures
    Balakirev S.V.Chernenko N.E.Shandyba N.A.Kirichenko D.V.Dukhan D.D.Eremenko M.M.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 7
    • 1227
    • Pages: 115-118

    Determination of the length of the 2×N superstructure during the synthesis of Ge on Si(001) at different temperatures

    Atom physics and physics of clusters and nanostructures
    Kukenov O.I.Dirko V.V.Lozovoy K.A.Maier X.A.Kokhanenko A.P.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 6
    • 1167
    • Pages: 91-95

    Localized Ga droplets formation on nanopatterned silicon substrates

    Condensed matter physics
    Eremenko M.M.Shandyba N.A.Chernenko N.E.Kirichenko D.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 7
    • 1196
    • Pages: 57-59

    Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

    Physical materials technology
    Shugabaev T.Kharchenko A.A.Dautov A.M.Kusnetsov A.Lendyashova V.V.Kryzhanovskaya N.V.Reznik R.R.Gridchin V.O.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 11
    • 1279
    • Pages: 278-282

    Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates

    Atom physics and physics of clusters and nanostructures
    Lendyashova V.V.Kotlyar K.P.Khrebtov A.I.Cirlin G.E.Ilkiv I.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 6
    • 1217
    • Pages: 152-155

    Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Dukhan D.D.Chernenko N.E.Kirichenko D.V.Kugaevsky A.D.Makhov I.S.Kryzhanovskaya N.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 12
    • 1330
    • Pages: 19-22

    Infrared photodetectors based on InAsP epitaxial nanowires on silicon

    Condensed matter physics
    Goltaev A. S.Fedina S.V.Fedorov V.V.Mozharov A.M.Novikova K.N.Maksimova A.A.Baranov A.I.Kaveev A.K.Pavlov A.V.Miniv D.V.Ustimenko R.V.Vinnichenko M.Ya.Mukhin I.S.
    • Year: 2025
    • Volume: 18
    • Issue: 2
    • 55
    • 5032
    • Pages: 9-21

    Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

    Physical materials technology
    Nikitina E.V.Shubina K.Yu.Sobolev M.S.Pirogov E.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 20
    • 3492
    • Pages: 275-278

    Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

    Physical electronics
    Barantsev O.V.Vasilkova E.I.Pirogov E.V.Shubina K.Yu.Baranov A.I.Voropaev K.O.Vasil’ev A.A.Karachinsky L.Ya.Novikov I.I.Sobolev M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 29
    • 3430
    • Pages: 182-186

    Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method

    Atom physics and physics of clusters and nanostructures
    Kukenov O.I.Dirko V.V.Lozovoy K.A.Kokhanenko A.P.Voitsekhovskii A.V.Maier X.A.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 14
    • 3405
    • Pages: 139-142

    Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode

    Simulation of physical processes
    Novikova K.N.Funtikova A.S.Mozharov A.M.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 23
    • 3438
    • Pages: 84-87

    Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

    Physical materials technology
    Shugabaev T.Gridchin V.O.Kusnetsov A.Kulagina A.S.Khrebtov A.I.Lendyashova V.V.Reznik R.R.Cirlin G.E.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 19
    • 3887
    • Pages: 306-309

    Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy

    Simulation of physical processes
    Dukhan D.D.Balakirev S.V.Voloshina E.N.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 3946
    • Pages: 100-104

    Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

    Condensed matter physics
    Kirichenko D.V.Makhov I.S.Balakirev S.V.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 22
    • 3720
    • Pages: 79-83

    Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

    Condensed matter physics
    Chernenko N.E.Makhov I.S.Melnichenko I.A.Yakunina K.D.Balakirev S.V.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 16
    • 3779
    • Pages: 38-42

    Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 21
    • 3695
    • Pages: 28-33

    The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

    Physical materials technology
    Fedorov V.V.Fedina S.V.Kaveev A.K.Kirilenko D.A.Faleev N.N.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 2
    • 50
    • 5115
    • Pages: 120-133

    Germanium polytypes formation on AlGaAs nanowire surface

    Atom physics and physics of clusters and nanostructures
    Ilkiv I.V.Kotlyar K.P.Osipov A.V.Reznik R.R.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 16
    • 4842
    • Pages: 289-293

    Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

    Simulation of physical processes
    Dukhan D.D.Balakirev S.V.Voloshina E.N.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 12
    • 5185
    • Pages: 193-197

    Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs

    Condensed matter physics
    Eremenko M.M.Nikitina L.S.Jityaeva J.Yu.Lakhina E.A.Klimin V.S.Ageev O.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 24
    • 5057
    • Pages: 122-127

    Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns

    Condensed matter physics
    Kukenov O.I.Sokolov A.S.Dirko V.V.Lozovoy K.A.Kokhanenko A.P.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 21
    • 5052
    • Pages: 112-116

    Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 18
    • 5256
    • Pages: 79-83

    Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

    Condensed matter physics
    Kirichenko D.V.Chernenko N.E.Shandyba N.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 24
    • 5234
    • Pages: 74-78

    Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

    Condensed matter physics
    Chernenko N.E.Makhov I.S.Balakirev S.V.Kirichenko D.V.Shandyba N.A.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 21
    • 4963
    • Pages: 64-68

    Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Reznik R.R.Kirilenko D.A.Baranov A.I.Dragunova A.S.Kryzhanovskaya N.V.Maksimova A.A.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 69
    • 6176
    • Pages: 179-184

    Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties

    Atom physics and physics of clusters and nanostructures
    Krichevtsov B.B.Korovin A.M.Suturin S.M.Sokolov N.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 15
    • 5463
    • Pages: 363-368

    Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

    Atom physics and physics of clusters and nanostructures
    Ilkiv I.V.Kotlyar K.P.Kirilenko D.A.Sharov V.A.Reznik R.R.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 31
    • 5838
    • Pages: 341-345

    Formation of a dielectric sublayer heterostructure of lead-tin telluride

    Condensed matter physics
    Kaveev A.K.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 21
    • 5538
    • Pages: 158-161

    Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

    Physical materials technology
    Gridchin V.O.Reznik R.R.Kotlyar K.P.Shugabaev T.Dragunova A.S.Kryzhanovskaya N.V.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 32
    • 6269
    • Pages: 311-314

    Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Baranov A.I.Maksimova A.A.Reznik R.R.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 39
    • 6361
    • Pages: 281-284

    Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Uvarov A.V.Filatov V.V.Mizerov A.M.Timoshnev S.N.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 37
    • 6172
    • Pages: 157-162

    Study of FIB-modified silicon areas by AFM and Raman spectroscopy

    Condensed matter physics
    Nikitina L.S.Lakhina E.A.Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 23
    • 6087
    • Pages: 59-63

    Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

    Condensed matter physics
    Eremenko M.M.Balakirev S.V.Chernenko N.E.Shandyba N.A.Solodovnik M.S.Ageev O.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 24
    • 6040
    • Pages: 54-58

    Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

    Condensed matter physics
    Chernenko N.E.Kirichenko D.V.Shandyba N.A.Balakirev S.V.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 21
    • 6153
    • Pages: 48-53

    Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Eremenko M.M.Balakirev S.V.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 16
    • 6215
    • Pages: 36-41

    Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

    Condensed matter physics
    Reznik R.R.Gridchin V.O.Kotlyar K.P.Ubyivovk E.V.Dragunova A.S.Kryzhanovskaya N.V.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 26
    • 6492
    • Pages: 31-35

    Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

    Physical electronics
    Kazakin A.N.Enns Ya.B.Uvarov A.V.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 32
    • 6198
    • Pages: 145-149

    Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

    Atom physics and physics of clusters and nanostructures
    Lendyashova V.V.Ilkiv I.V.Borodin B.R.Ubyivovk E.V.Reznik R.R.Talalaev V.G.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 35
    • 6181
    • Pages: 75-79

    The growth of gallium nitride layers with low dislocation density

    Condensed matter physics
    Mamaev V.V.Sidorov V.G.Petrov S.I.Alexeev A.N.
    • Year: 2012
    • Issue: 4
    • 1
    • 9588
    • Pages: 28-31