Articles by keywords "molecular beam epitaxy"

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 5
  • 196
  • Pages: 9-21

Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 8
  • 901
  • Pages: 275-278

Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 17
  • 946
  • Pages: 182-186

Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 8
  • 942
  • Pages: 139-142

Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 14
  • 919
  • Pages: 84-87

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 13
  • 1216
  • Pages: 306-309

Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 11
  • 1233
  • Pages: 100-104

Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 1179
  • Pages: 79-83

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 1132
  • Pages: 38-42

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 1169
  • Pages: 28-33

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 39
  • 2316
  • Pages: 120-133

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 2487
  • Pages: 289-293

Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 9
  • 2615
  • Pages: 193-197

Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 2563
  • Pages: 122-127

Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 2567
  • Pages: 112-116

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 2610
  • Pages: 79-83

Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 2599
  • Pages: 74-78

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 2486
  • Pages: 64-68

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 55
  • 3490
  • Pages: 179-184

Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 10
  • 2923
  • Pages: 363-368

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 25
  • 3416
  • Pages: 341-345

Formation of a dielectric sublayer heterostructure of lead-tin telluride

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 17
  • 3040
  • Pages: 158-161

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 29
  • 3625
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 36
  • 3680
  • Pages: 281-284

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 33
  • 3623
  • Pages: 157-162

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 18
  • 3545
  • Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 22
  • 3503
  • Pages: 54-58

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 3424
  • Pages: 48-53

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 3559
  • Pages: 36-41

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 24
  • 3793
  • Pages: 31-35

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 3665
  • Pages: 145-149

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 28
  • 3656
  • Pages: 75-79

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 7311
  • Pages: 28-31