Formation of a dielectric sublayer heterostructure of lead-tin telluride

We have optimized the growth parameters of the buffer layer for further Pb_1-xSn_xTe (x ≥ 0.4) deposition from the point of view of smoothness and crystalline quality. The latter has the properties of a crystalline topological insulator. A  three-component heterostructure consisting of fluorite CaF₂, BaF₂, and cubic Pb_0.7Sn_0.3Te:In layers was formed on the Si(111). The surface morphology of this hybrid heterostructure was studied depending on the growth  temperature and the thickness.