Latest issues
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 4774
- Pages: 133-137
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
- Year: 2024
- Volume: 17
- Issue: 3.2
- 26
- 3225
- Pages: 182-186
Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles
- Year: 2025
- Volume: 18
- Issue: 3.2
- 13
- 1012
- Pages: 172-177

