Latest issues
- 2026, Volume 19 Issue 1
- 2025, Volume 18 Issue 4.1 Full text
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 4249
- Pages: 133-137
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
- Year: 2024
- Volume: 17
- Issue: 3.2
- 24
- 2655
- Pages: 182-186
Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles
- Year: 2025
- Volume: 18
- Issue: 3.2
- 7
- 469
- Pages: 172-177