Study of the effect of dynamic and temperature inhomogeneities on epitaxial processes in a horizontal CVD reactor

In order to investigate the effect of temperature and velocity inhomogeneities at the reactor inlet on the susceptor growth rate distribution, a numerical simulation of the flow in a horizontal CVD reactor was carried out. It was obtained  that the velocity inhomogeneity can reach 60%, and this can considerably affect the growth rate distribution on susceptor. To simulate the temperature inhomogeneities, the temperature distribution at the reactor inlet was set  separately for the bottom and the main inlet. The temperature inhomogeneity at the bottom inlet affects the growth rate distribution more drastically than at the main inlet. This influence is quite strong and should be taken into account for accurate simulation of the flow and growth processes in similar horizontal CVD reactors.