SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
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    Articles by keywords "nanowire"

    The resistive switching effect in the n-GaN/p-Si heterostructures

    Condensed matter physics
    Shugurov K.Yu.Mozharov A.M.Kaveev A.K.Fedorov V.V.
    • Year: 2026
    • Volume: 19
    • Issue: 1
    • 15
    • 334
    • Pages: 9-18

    MBE growth of GaAs nanowires with a silicon rich particle on the top

    Condensed matter physics
    Sibirev N.V.Ilkiv I.V.Ubyivovk E.V.Soshnikov I.P.Shtrom I.V.Reznik R.R.Brukhanova V.V.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 4.1
    • 5
    • 536
    • Pages: 62-66

    Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire

    Condensed matter physics
    Subbotina E.A.Subbotina A.S.Serov A.Yu.Filosofov N.G.Gridchin V.O.Sibirev N.V.Cirlin G.E.Shtrom I.V.
    • Year: 2025
    • Volume: 18
    • Issue: 4.1
    • 3
    • 527
    • Pages: 44-48

    Magnetic properties of iron nanowires in a porous aluminum oxide matrix

    Atom physics and physics of clusters and nanostructures
    Grushevsky E.A.Savinsky N.G.Trushin O.S.Naumov V.V.Shendrikova L.A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 6
    • 577
    • Pages: 106-109

    Numerical modeling of optical transmittance of 2×2 directional couplers based on GaP nanowires

    Simulation of physical processes
    Anikina M.A.Kusnetsov A.Bolshakov A.D.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 6
    • 570
    • Pages: 76-80

    Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

    Physical materials technology
    Shugabaev T.Kharchenko A.A.Dautov A.M.Kusnetsov A.Lendyashova V.V.Kryzhanovskaya N.V.Reznik R.R.Gridchin V.O.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 4
    • 621
    • Pages: 278-282

    Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates

    Atom physics and physics of clusters and nanostructures
    Lendyashova V.V.Kotlyar K.P.Khrebtov A.I.Cirlin G.E.Ilkiv I.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 4
    • 626
    • Pages: 152-155

    MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

    Atom physics and physics of clusters and nanostructures
    Andreeva A.S.Ilkiv I.V.Kotlyar K.P.Khrebtov A.I.Gridchin V.O.Cirlin G.E.Reznik R.R.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 6
    • 665
    • Pages: 148-151

    Growth of GaN nanowires with InN inserts by PA-MBE

    Atom physics and physics of clusters and nanostructures
    Gridchin V.O.Mintairov A.M.Shugabaev T.Axenov V.Yu.Vlasov A.S.Lendyashova V.V.Kotlyar K.P.Eliseev I.A.Khrebtov A.I.Reznik R.R.Davydov V.Yu.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 3
    • 617
    • Pages: 139-142

    Modification of silicon nanowires with silver nanoparticles for gas sensor applications

    Condensed matter physics
    Kondratev V.M.Vyacheslavova E.A.Shugabaev T.Bolshakov A.D.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 4
    • 615
    • Pages: 81-84

    Synthesis of Mg2Si-based core-shell nanowires

    Condensed matter physics
    Subbotin E.Yu.Kozlov A.G.Pavlov Dmitrii V.Lisenkov O.E.Udilov A.D.Goroshko D.L.Poliakov M.V.Volkova L.S.Prokopeva G.A.Chernev I.M.Khoroshilov D.A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 11
    • 654
    • Pages: 36-39

    Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Dukhan D.D.Chernenko N.E.Kirichenko D.V.Kugaevsky A.D.Makhov I.S.Kryzhanovskaya N.V.Balakirev S.V.Solodovnik M.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 10
    • 715
    • Pages: 19-22

    The length distribution of nanowires with forward and backward surface diffusion

    Simulation of physical processes
    Dubrovskii V.G.Leshchenko E.D.
    • Year: 2025
    • Volume: 18
    • Issue: 4
    • 14
    • 775
    • Pages: 34-47

    Memristor effect in heterostructures based on gallium nitride nanowires on silicon

    Condensed matter physics
    Shugurov K.Yu.Mozharov A.M.Kaveev A.K.Fedorov V.V.
    • Year: 2025
    • Volume: 18
    • Issue: 4
    • 20
    • 780
    • Pages: 9-20

    Infrared photodetectors based on InAsP epitaxial nanowires on silicon

    Condensed matter physics
    Goltaev A. S.Fedina S.V.Fedorov V.V.Mozharov A.M.Novikova K.N.Maksimova A.A.Baranov A.I.Kaveev A.K.Pavlov A.V.Miniv D.V.Ustimenko R.V.Vinnichenko M.Ya.Mukhin I.S.
    • Year: 2025
    • Volume: 18
    • Issue: 2
    • 50
    • 4351
    • Pages: 9-21

    Silicon nanowire based sensorics of acids and bases

    Optoelectronic and nanoelectronic devices
    Svinkin N.А.Kondratev V.M.Polozkov R.G.Novikova K.N.Zubov Fedor I.Mozharov A.M.Bolshakov A.D.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 19
    • 4036
    • Pages: 145-151

    Polarized Raman scattering in strained GaN nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Sharov V.A.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 8
    • 3823
    • Pages: 83-87

    Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Kozko I.A.Karaseva E.P.Svinkin N.А.Rider М.А.Vyacheslavova E.A.Gridchin V.O.Fedorov V.V.Kondratev V.M.Bolshakov A.D.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 13
    • 3894
    • Pages: 77-82

    Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon

    Atom physics and physics of clusters and nanostructures
    Kaveev A.K.Fedorov V.V.Miniv D.V.
    • Year: 2024
    • Volume: 17
    • Issue: 4
    • 21
    • 3931
    • Pages: 88-97

    Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

    Physics of molecules, clusters and nanostructures
    Gridchin V.O.Shugabaev T.Lendyashova V.V.Kotlyar K.P.Khrebtov A.I.Dragunova A.S.Kryzhanovskaya N.V.Reznik R.R.Cirlin G.E.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 17
    • 2610
    • Pages: 143-147

    The method of obtaining Ni and Co nanowires in porous anodic alumina matrices

    Physics of molecules, clusters and nanostructures
    Grushevsky E.A.Savinsky N.G.Trushin O.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 6
    • 2667
    • Pages: 135-138

    Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires

    Simulation of physical processes
    Balagan S.A.Galkin N.G.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 10
    • 2906
    • Pages: 107-111

    Millifluidic polyol synthesis of Ag nanowires and microplotter printing of transparent conductive films

    Condensed matter physics
    Arsenov P.V.Pilyushenko K.S.Kazarinova D.D.Vlasov I.S.Volkov I.A.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 26
    • 2891
    • Pages: 78-83

    Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

    Physical materials technology
    Shugabaev T.Gridchin V.O.Kusnetsov A.Kulagina A.S.Khrebtov A.I.Lendyashova V.V.Reznik R.R.Cirlin G.E.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 18
    • 3292
    • Pages: 306-309

    Numerical modal analysis of GaP optical microcavity

    Simulation of physical processes
    Funtikova A.S.Mozharov A.M.Fedorov V.V.Sharov V.A.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 29
    • 3311
    • Pages: 115-119

    Photoluminescence of self-induced InAs nanowires diluted with nitrogen

    Condensed matter physics
    Ruzhevich M.S.Mynbaev K.D.Bazhenov N.L.Kaveev A.K.Pavlov A.V.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 3202
    • Pages: 34-37

    Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

    Condensed matter physics
    Shandyba N.A.Eremenko M.M.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 20
    • 3108
    • Pages: 28-33

    Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

    Simulation of physical processes
    Barykin D.A.Shugurov K.Yu.Mozharov A.M.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3
    • 27
    • 3673
    • Pages: 46-56

    Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

    Quantum wires, quantum dots, and other low-dimensional systems
    Sharov V.A.Alekseev P.A.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 21
    • 3592
    • Pages: 125-130

    Temperature evolution of GaP nanowires photoelectronic properties

    Quantum wires, quantum dots, and other low-dimensional systems
    Karaseva E.P.Kozko I.A.Rider М.А.Kovova M.S.Zakharov V.V.Fedina S.V.Kondratev V.M.Bolshakov A.D.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 34
    • 3634
    • Pages: 119-124

    Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

    Quantum wires, quantum dots, and other low-dimensional systems
    Kozko I.A.Karaseva E.P.Sosnovitskaia Z.F.Istomina M.S.Fedorov V.V.Shmakov S.V.Kondratev V.M.Bolshakov A.D.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 61
    • 3807
    • Pages: 113-118

    Destruction of the conducting state by ac electric field in naphthalocyanine complexes

    Bulk properties of semiconductors
    Pshenichnyi V.A.Dubinina T.V.Drozdov K.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 22
    • 3702
    • Pages: 25-30

    Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

    Simulation of physical processes
    Dvoretckaia L.N. Mozharov A.M.Goltaev A. S.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 1
    • 25
    • 4962
    • Pages: 38-46

    Quantum dot-induced photoluminescence enhancement of InGaN nanowires

    Physical materials technology
    Shugabaev T.Gridchin V.O.Reznik R.R.Khrebtov A.I.Melnichenko I.A.Kulagina A.S.Kotlyar K.P.Lendyashova V.V.Kryzhanovskaya N.V.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 13
    • 4475
    • Pages: 255-260

    Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

    Physical optics
    Anikina M.A.Kusnetsov A.Toksumakov A.N.Dremov V.V.Ghazaryan D.A.Fedorov V.V.Arsenin А.V.Volkov V.S.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 15
    • 4512
    • Pages: 130-136

    Germanium polytypes formation on AlGaAs nanowire surface

    Atom physics and physics of clusters and nanostructures
    Ilkiv I.V.Kotlyar K.P.Osipov A.V.Reznik R.R.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 15
    • 4269
    • Pages: 289-293

    Towards versatile photonics based on GaP nanowires decorated with carbon dots

    Condensed matter physics
    Zavyalova E.S.Kusnetsov A.Rider М.А.Kondratev V.M.Kovova M.S.Shmakov S.V.Fedorov V. V.Zakharov V.V.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 24
    • 4573
    • Pages: 187-192

    Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis

    Condensed matter physics
    Kadinskaya S.A.Kondratev V.M.Kusnetsov A.Lihachev A.I.Nashchekin A.V.Akopyan I.Kh.Serov A.Yu.Labzovskaya M.E.Mikushev S.V.Novikov B.V.Shtrom I.V.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 22
    • 4479
    • Pages: 176-181

    Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy

    Condensed matter physics
    Kondratev V.M.Kozko I.A.Karaseva E.P.Vyacheslavova E.A.Shugabaev T.Svinkin N.А.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 12
    • 4412
    • Pages: 151-156

    Hybrid Perovskite/GaP nanowires solar cells with enhanced photovoltaic performance

    Condensed matter physics
    Baeva Maria Furasova A.D.Mozharov A.M.Tonkaev P.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 12
    • 4566
    • Pages: 90-93

    Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Sharov V.A.Balakirev S.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 16
    • 4610
    • Pages: 79-83

    Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

    Optoelectronic and nanoelectronic devices
    Vyacheslavova E.A.Uvarov A.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 11
    • 4910
    • Pages: 176-181

    Study of composite structure based on Ag and SiNWs

    Quantum wires, quantum dots, and other low-dimensional systems
    Bolshakov V.O.Ermina A.A.Prigoda K.V.Maximov M.Yu.Tolmachev V.A.Zharova Yu.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 23
    • 4840
    • Pages: 128-134

    Interband photoluminescence of InAs(P)/Si nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Ustimenko R.V.Vinnichenko M.Ya.Karaulov D.A.Firsov D.A.Fedorov V.V.Mozharov A.M.Kirilenko D.A.Mukhin I.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 34
    • 4946
    • Pages: 101-107

    Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures

    Quantum wires, quantum dots, and other low-dimensional systems
    Leshchenko E.D.Dubrovskii V.G.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 15
    • 4565
    • Pages: 96-100

    Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Reznik R.R.Kirilenko D.A.Baranov A.I.Dragunova A.S.Kryzhanovskaya N.V.Maksimova A.A.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 68
    • 5579
    • Pages: 179-184

    Optical properties of single InGaN nanowires with core-shell structure

    Physical optics
    Komarov S.D.Gridchin V.O.Lendyashova V.V.Kotlyar K.P.Reznik R.R.Dvoretskaya N.V.Dragunova A.S.Makhov I.S.Nadtochiy A.M.Kryzhanovskaya N.V.Cirlin G.E.Zhukov A.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 48
    • 5264
    • Pages: 114-120

    Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

    Physical electronics
    Vyacheslavova E.A.Uvarov A.V.Neplokh V.V.Maksimova A.A.Baranov A.I.Gudovskikh A.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 50
    • 5442
    • Pages: 10-17

    Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

    Atom physics and physics of clusters and nanostructures
    Ilkiv I.V.Kotlyar K.P.Kirilenko D.A.Sharov V.A.Reznik R.R.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 30
    • 5299
    • Pages: 341-345

    Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

    Condensed matter physics
    Reznik R.R.Gridchin V.O.Kotlyar K.P.Dragunova A.S.Kryzhanovskaya N.V.Samsonenko Yu.B.Soshnikov I.P.Khrebtov A.I.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 26
    • 4967
    • Pages: 153-157

    Study of mechanical resonance frequencies in tapered nanowires

    Condensed matter physics
    Dunaevskiy M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 14
    • 5198
    • Pages: 109-112

    Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

    Condensed matter physics
    Kondratev V.M.Vyacheslavova E.A.Morozov Ivan A.Nalimova S.S. Moshnikov V.A.Gudovskikh A.S.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 31
    • 5195
    • Pages: 43-48

    Dielectric spectroscopy of Ag2S nanowires synthesized in porous silicate glasses

    Condensed matter physics
    Ilinskiy A.V.Castro R.A.Pashkevich M.E.Popova I.O.Sidorov A.I.Shadrin E.B.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 20
    • 5165
    • Pages: 33-37

    Low-adhesive silicone rubbers for flexible light-emitting devices

    Physical materials technology
    Miroshnichenko A.S.Deriabin K.V.Mukhin I.S.Islamova R.M.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 8
    • 5509
    • Pages: 320-325

    Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Baranov A.I.Maksimova A.A.Reznik R.R.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 38
    • 5794
    • Pages: 281-284

    Electrical conductivity and optical properties of water-based graphene/AgNWs hybrid inks for flexible electronics

    Atom physics and physics of clusters and nanostructures
    Dronova M.A.Danilov E.A.Veretennikov M.R.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 24
    • 5484
    • Pages: 101-104

    Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

    Condensed matter physics
    Shandyba N.A.Kirichenko D.V.Chernenko N.E.Eremenko M.M.Balakirev S.V.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 16
    • 5614
    • Pages: 36-41

    Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

    Condensed matter physics
    Reznik R.R.Gridchin V.O.Kotlyar K.P.Ubyivovk E.V.Dragunova A.S.Kryzhanovskaya N.V.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 26
    • 5879
    • Pages: 31-35

    Impact of the current pulse width on the speed of metal-insulator transition in VO2 nanobeams

    Physical electronics
    Alymov G.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 17
    • 5442
    • Pages: 130-134

    Study of quasi 1-D silicon nanostructures adsorption properties

    Condensed matter physics
    Kondratev V.M.Vyacheslavova E.A.Morozov Ivan A.Nalimova S.S. Moshnikov V.A.Gudovskikh A.S.Bolshakov A.D.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 57
    • 5815
    • Pages: 10-15

    Effect of thermal annealing on the composition of Ge-Co nanostructure obtained by electrochemical deposition

    Physical materials technology
    Martynova I.K.Gavrilin I.M.
    • Year: 2022
    • Volume: 15
    • Issue: 3.1
    • 9
    • 5589
    • Pages: 232-236

    Facile fabrication of a TiO2 NW-based glucose sensor by direct ink writing

    Atom physics and physics of clusters and nanostructures
    Tarasov A.M.Dubkov S.V.Gromov D.G.Ryazanov R.M.Volkova L.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.1
    • 29
    • 6130
    • Pages: 125-130

    FORC-investigation of magnetic properties of Ni nanowire arrays synthesized using Al2O3 templates with different order of pores

    Atom physics and physics of clusters and nanostructures
    Sobirov M.I.Samardak A.Yu.Potapova S.R.Karibov M.B.Rogachev K.A.Ognev Samardak A.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.1
    • 32
    • 6065
    • Pages: 113-118

    Investigation of temperature stability of germanium nanowires obtained by electrochemical deposition

    Condensed matter physics
    Goroshko D.L.Chusovitin E.A.Dronov A.A.Gavrilin I.M.
    • Year: 2022
    • Volume: 15
    • Issue: 3.1
    • 29
    • 5699
    • Pages: 59-64