Articles by keywords "nanowire"
Role of the buffer layer on the mechanical strength of nanowire-substrate interface
- Year: 2026
- Volume: 19
- Issue: 1.1
- 2
- 335
- Pages: 75-80
The resistive switching effect in the n-GaN/p-Si heterostructures
- Year: 2026
- Volume: 19
- Issue: 1
- 18
- 680
- Pages: 9-18
MBE growth of GaAs nanowires with a silicon rich particle on the top
- Year: 2025
- Volume: 18
- Issue: 4.1
- 10
- 870
- Pages: 62-66
Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire
- Year: 2025
- Volume: 18
- Issue: 4.1
- 5
- 870
- Pages: 44-48
Magnetic properties of iron nanowires in a porous aluminum oxide matrix
- Year: 2025
- Volume: 18
- Issue: 3.2
- 8
- 869
- Pages: 106-109
Numerical modeling of optical transmittance of 2×2 directional couplers based on GaP nanowires
- Year: 2025
- Volume: 18
- Issue: 3.2
- 8
- 845
- Pages: 76-80
Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 951
- Pages: 278-282
Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 918
- Pages: 152-155
MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions
- Year: 2025
- Volume: 18
- Issue: 3.1
- 8
- 971
- Pages: 148-151
Growth of GaN nanowires with InN inserts by PA-MBE
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 906
- Pages: 139-142
Modification of silicon nanowires with silver nanoparticles for gas sensor applications
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 905
- Pages: 81-84
Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment
- Year: 2025
- Volume: 18
- Issue: 3.1
- 11
- 1013
- Pages: 19-22
The length distribution of nanowires with forward and backward surface diffusion
- Year: 2025
- Volume: 18
- Issue: 4
- 15
- 1093
- Pages: 34-47
Memristor effect in heterostructures based on gallium nitride nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 4
- 23
- 1094
- Pages: 9-20
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 54
- 4711
- Pages: 9-21
Silicon nanowire based sensorics of acids and bases
- Year: 2025
- Volume: 18
- Issue: 1.1
- 20
- 4346
- Pages: 145-151
Polarized Raman scattering in strained GaN nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 10
- 4095
- Pages: 83-87
Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 14
- 4182
- Pages: 77-82
Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon
- Year: 2024
- Volume: 17
- Issue: 4
- 23
- 4311
- Pages: 88-97
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 17
- 2910
- Pages: 143-147
The method of obtaining Ni and Co nanowires in porous anodic alumina matrices
- Year: 2024
- Volume: 17
- Issue: 3.2
- 6
- 2973
- Pages: 135-138
Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 3189
- Pages: 107-111
Millifluidic polyol synthesis of Ag nanowires and microplotter printing of transparent conductive films
- Year: 2024
- Volume: 17
- Issue: 3.2
- 26
- 3170
- Pages: 78-83
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 3597
- Pages: 306-309
Numerical modal analysis of GaP optical microcavity
- Year: 2024
- Volume: 17
- Issue: 3.1
- 29
- 3622
- Pages: 115-119
Photoluminescence of self-induced InAs nanowires diluted with nitrogen
- Year: 2024
- Volume: 17
- Issue: 3.1
- 15
- 3513
- Pages: 34-37
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 20
- 3413
- Pages: 28-33
Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 27
- 3980
- Pages: 46-56
Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3865
- Pages: 125-130
Temperature evolution of GaP nanowires photoelectronic properties
- Year: 2024
- Volume: 17
- Issue: 1.1
- 35
- 3937
- Pages: 119-124
Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots
- Year: 2024
- Volume: 17
- Issue: 1.1
- 61
- 4111
- Pages: 113-118
Destruction of the conducting state by ac electric field in naphthalocyanine complexes
- Year: 2024
- Volume: 17
- Issue: 1.1
- 22
- 4027
- Pages: 25-30
Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
- Year: 2024
- Volume: 17
- Issue: 1
- 26
- 5270
- Pages: 38-46
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 4759
- Pages: 255-260
Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides
- Year: 2023
- Volume: 16
- Issue: 3.2
- 15
- 4825
- Pages: 130-136
Germanium polytypes formation on AlGaAs nanowire surface
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 4551
- Pages: 289-293
Towards versatile photonics based on GaP nanowires decorated with carbon dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 25
- 4851
- Pages: 187-192
Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 4772
- Pages: 176-181
Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 4692
- Pages: 151-156
Hybrid Perovskite/GaP nanowires solar cells with enhanced photovoltaic performance
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 4860
- Pages: 90-93
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 17
- 4926
- Pages: 79-83
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 11
- 5206
- Pages: 176-181
Study of composite structure based on Ag and SiNWs
- Year: 2023
- Volume: 16
- Issue: 1.3
- 23
- 5084
- Pages: 128-134
Interband photoluminescence of InAs(P)/Si nanowires
- Year: 2023
- Volume: 16
- Issue: 1.3
- 35
- 5245
- Pages: 101-107
Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.3
- 16
- 4812
- Pages: 96-100
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 68
- 5892
- Pages: 179-184
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 49
- 5564
- Pages: 114-120
Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures
- Year: 2023
- Volume: 16
- Issue: 1.2
- 50
- 5773
- Pages: 10-17
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 30
- 5567
- Pages: 341-345
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 26
- 5268
- Pages: 153-157
Study of mechanical resonance frequencies in tapered nanowires
- Year: 2023
- Volume: 16
- Issue: 1.1
- 14
- 5464
- Pages: 109-112
Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 5474
- Pages: 43-48
Dielectric spectroscopy of Ag2S nanowires synthesized in porous silicate glasses
- Year: 2023
- Volume: 16
- Issue: 1.1
- 20
- 5427
- Pages: 33-37
Low-adhesive silicone rubbers for flexible light-emitting devices
- Year: 2022
- Volume: 15
- Issue: 3.3
- 8
- 5822
- Pages: 320-325
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 38
- 6077
- Pages: 281-284
Electrical conductivity and optical properties of water-based graphene/AgNWs hybrid inks for flexible electronics
- Year: 2022
- Volume: 15
- Issue: 3.3
- 24
- 5753
- Pages: 101-104
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 5920
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 6201
- Pages: 31-35
Impact of the current pulse width on the speed of metal-insulator transition in VO2 nanobeams
- Year: 2022
- Volume: 15
- Issue: 3.2
- 18
- 5726
- Pages: 130-134
Study of quasi 1-D silicon nanostructures adsorption properties
- Year: 2022
- Volume: 15
- Issue: 3.2
- 57
- 6125
- Pages: 10-15
Effect of thermal annealing on the composition of Ge-Co nanostructure obtained by electrochemical deposition
- Year: 2022
- Volume: 15
- Issue: 3.1
- 9
- 5872
- Pages: 232-236
Facile fabrication of a TiO2 NW-based glucose sensor by direct ink writing
- Year: 2022
- Volume: 15
- Issue: 3.1
- 29
- 6405
- Pages: 125-130
FORC-investigation of magnetic properties of Ni nanowire arrays synthesized using Al2O3 templates with different order of pores
- Year: 2022
- Volume: 15
- Issue: 3.1
- 32
- 6336
- Pages: 113-118
Investigation of temperature stability of germanium nanowires obtained by electrochemical deposition
- Year: 2022
- Volume: 15
- Issue: 3.1
- 29
- 5972
- Pages: 59-64

