Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

In this paper investigations of surface morphology of pHEMT transistors based on GaAs were carried out by means of atomic force microscopy. Peculiarities of pHEMT technology and features, which have markedly influence upon its main parameters, are discussed. Possibilities of combinative approach, which combines etching processes and AFM study, for upgrading analytical information are demonstrated by investigation of active region of pHEMT.