Articles by keywords "heterostructure"
Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
- Year: 2024
- Volume: 17
- Issue: 1
- 6
- 194
- Pages: 38-46
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 5
- 508
- Pages: 223-227
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 563
- Pages: 449-453
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 4
- 620
- Pages: 133-137
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 666
- Pages: 47-52
Emission, optical and electrical properties of GaInP/GaP nanofilms
- Year: 2023
- Volume: 16
- Issue: 2
- 12
- 1374
- Pages: 89-97
Polarimetry of waveguiding heterostructures with quantum well-dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 7
- 1082
- Pages: 140-145
Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.3
- 9
- 1150
- Pages: 96-100
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 1240
- Pages: 33-38
Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers
- Year: 2023
- Volume: 16
- Issue: 1.1
- 18
- 1275
- Pages: 49-53
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 19
- 1292
- Pages: 22-27
Measurement of the internal quantum efficiency of emission in the local region of the LED chip
- Year: 2022
- Volume: 15
- Issue: 3.3
- 8
- 1746
- Pages: 226-229
Optimization of heterostructure transistor parameters for the monolithic integrated circuits of the amplifying path of a medical radiothermograph
- Year: 2022
- Volume: 15
- Issue: 3.2
- 6
- 1721
- Pages: 326-330
Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure
- Year: 2022
- Volume: 15
- Issue: 3.1
- 18
- 2184
- Pages: 32-37
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 5892
- Pages: 7-13
AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor
- Year: 2009
- Issue: 1
- 0
- 5620
- Pages: 43-48
The topical trends in semiconductor and nanostructure physics, semiconductor opto- and nanoelectronics (on the 18th All-Russion Youth Conference)
- Year: 2017
- Volume: 10
- Issue: 2
- 68
- 5771
- Pages: 123-132
Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics
- Year: 2016
- Issue: 1
- 242
- 5894
- Pages: 98-108
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 5487
- Pages: 11-14
Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures
- Year: 2013
- Issue: 3
- 378
- 5883
- Pages: 60-68
Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods
- Year: 2010
- Issue: 1
- 1
- 5560
- Pages: 18-28
The technique of investigation of surface states in a sharp nonsymmetrical CdS / p-Si heterostructures
- Year: 2012
- Issue: 2
- 1
- 5570
- Pages: 27-32
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 5439
- Pages: 28-31