Heterostructure design features for 975 nm high-power laser diodes

The heterostructure design has been optimized to achieve high radiation output power and high conversion efficiency of 970−980 nm laser diodes. The influence of active layer geometry and waveguide layer doping on the output electrical and optical LD chip parameters has been studied. As a result of the optimization, operating LD output of 11.6 W has been achieved at a current of 12 A. The maximum conversion efficiency was 65% at a pump current of 5A.