Capacitance-voltage characterization of BP layers grown by PECVD mode

Boron phosphide is perspective material for solar cells based on BP/n-Si selective heterojunction. Here, BP layers grown by plasma-enhanced chemical vapor deposition at low temperature in continuous mode with flows of diborane and phosphine. It was shown rectifying behavior of current-voltage characteristics in Au/BP/n-Si structure with increasing of plasma power and additional dilution of gas mixture by hydrogen flow due to improvement of conductivity, and Au/BP/p-Si heterojunction showed photoelectric response. In result, BP layers are donor doped, and capacitance-voltage profiling at different temperature prove temperature activation of conductivity in BP.