2304-9782, 2618-8686, 2405-7223 St. Petersburg Polytechnic University Journal: Physics and Mathematics 19 1.1 2026 1-169
CNF RUS 6-11 ITMO University Balashov Vladimir vovan.balashov@gmail.com 0000-0002-4513-6345 ITMO University Ruzhevich Maxim max.ruzhevich@niuitmo.ru St. Petersburg Electrotechnical University "LETI" Chumanov Ivan chumanov2000@yandex.ru
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Firsov Dmitrii d.d.firsov@gmail.com
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Komkov Oleg oleg_sergeevich@mail.ru
St. Petersburg, Russian Federation
 Ioffe Institute Mynbaev Karim mynkad@mail.ioffe.ru Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Remesnik Vladimir remesnik@isp.nsc.ru 0000-0001-7722-6428 Varavin Vasiliy varavin@isp.nsc.ru Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Mikhailov Nikolay mikhailov@isp.nsc.ru Photoluminescence and photoreflectance of annealed HgCdTe films with high CdTe content The results of a study of photoluminescence and photoreflectance of Hg1-xCdxTe films with CdTe molar fraction x = 0.5 – 0.7 are presented. The films were grown by molecular beam epitaxy and annealed under mercury deficiency conditions to convert them to hole-type conductivity by generating intrinsic acceptors, mercury vacancies. Annealing resulted in the significant blue-shift of both the photoluminescence and photoreflectance spectra. Energy levels within the bandgap with ionization energies from 44 to 125 meV were detected in the films, and their nature is discussed. 10.18721/JPM.191.101 535-1 HgCdTe annealing photoluminescence photoreflectance https://physmath.spbstu.ru/article/2026.87.1/
CNF RUS 12-20 0000-0003-4123-4375 Peter the Great St. Petersburg Polytechnic University Ustimenko Ratmir ustimenko_rv@spbstu.ru
St. Petersburg, Russian Federation
 Peter the Great St. Petersburg Polytechnic University Shalygin Vadim shalygin@rphf.spbstu.ru Peter the Great St. Petersburg Polytechnic University Karaulov Danila karaulov.da@edu.spbstu.ru
St. Petersburg, Russian Federation
 0000-0002-0048-7512 Peter the Great St. Petersburg Polytechnic University Norvatov Ilya norv2@mail.ru
St. Petersburg, Russian Federation
 Peter the Great St. Petersburg Polytechnic University Melentyev Grigori gamelen@spbstu.ru Peter the Great St. Petersburg Polytechnic University Vinnichenko Maxim mvin@spbstu.ru J-6066-2013 35403302800 0000-0003-3947-4994 Peter the Great St. Petersburg Polytechnic University Firsov Dmitry firsov.da@spbstu.ru
Russia, 195251, St.Petersburg, Polytechnicheskaya, 29
 Electric field-induced anisotropy of absorption and refraction of terahertz radiation in n-InSb The effect of an electric field on the optical characteristics of bulk n-InSb in the terahertz spectral range (wavelength of 119 μm) at a temperature of 78 K was experimentally studied. The observed changes in the absorption coefficient and refractive index are explained by an increase in the average energy of electrons in an electric field, which is accompanied by a change in the average inverse effective mass of electrons due to the non-parabolicity of the conduction band. Along with the isotropic change in the optical characteristics in electric field, a dependence of the absorption and refraction of terahertz radiation on the direction of the polarization vector was revealed: the measurement results are different for electromagnetic radiation linearly polarized parallel and perpendicular to the field. A comparison of the experimental results with the results of theoretical modeling showed that the observed anisotropy of absorption and refraction is associated with the combined action of two factors: the non-parabolicity of the conduction band and the anisotropy of the nonequilibrium distribution function of electrons over states in momentum space. 10.18721/JPM.191.102 535.34 distribution function anisotropy electron heating electron drift radiation absorption radiation refraction polarization of radiation InSb https://physmath.spbstu.ru/article/2026.87.2/
CNF RUS 21-26 Ioffe Institute Isakov Ivan isakov-ivan.2016@yandex.ru Ioffe Institute Verbitskaya Elena elena.verbitskaia@cern.ch
St. Petersburg, Russian Federation
 Ioffe Institute Eremin Vladimir vladimir.eremin@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Fadeeva Nadezda fadeeva.nadezda@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Eremin Igor Igor.Pti@mail.ioffe.ru
St. Petersburg, Russian Federation
 Lifetimes of electrons and holes in pure Si at temperature 40 mK The paper presents the study of experimental current responses of Si p+-n-n+ 3 mm thick structure operated at 40 mK. Analysis of the data showed reduction of carrier lifetimes in silicon to 50‒70 ns for electrons and 350 ns for holes, which is the most critical factor for restriction of the internal thermal gain in bolometric detectors based on the Joule-Lenz effect and should be accounted for in the optimization of detector design. 10.18721/JPM.191.103 621.315.592.2 silicon current response carrier trapping bolometric detector https://physmath.spbstu.ru/article/2026.87.3/
CNF RUS 27-32 Ioffe Institute Yakovleva Valentina v.yakovleva@mail.ioffe.ru Ioffe Institute Likhachev Kirill Likhachevkv@mail.ioffe.ru Ioffe Institute Muzafarova Marina Marina.Muzafarova@mail.ioffe.ru Ioffe Institute Babunts Roman roman.babunts@gmail.com Ioffe Institute Baranov Pavel Pavel.Baranov@mail.ioffe.ru The influence of diamond origin on the properties of NV centers Diamond samples of various origins containing NV centers were studied using optically detected magnetic resonance (ODMR) and photoluminescence (PL) methods. It is shown that various impurities and deformation-induced defects can significantly influence the crystal environment and properties of NV centers. This influence is reflected in such characteristics as the distribution of NV centers throughout the crystal volume, their charge state (the ratio of neutral to negatively charged NV centers), mechanical stresses and strains in their crystalline environment, interaction with a nitrogen donor, which affects their coherent properties, and their orientation within the diamond lattice. 10.18721/JPM.191.104 535.3 diamond photoluminescence optically detected magnetic resonance NV center scanning confocal microscopy https://physmath.spbstu.ru/article/2026.87.4/
CNF RUS 33-38 0009-0007-1056-5100 ITMO University Kirilenko Iaroslav idkirilenko@itmo.ru Ioffe Institute Mynbaev Karim mynkad@mail.ioffe.ru 0000-0002-9989-3843 Ioffe Institute Romanov Viacheslav romanovvv@mail.ioffe.ru Ioffe Institute Bazhenov Nikolai bazhnil.ivom@mail.ioffe.ru Ioffe Institute Moiseev Konstantin mkd@iropt2.ioffe.ru
St. Petersburg, Russian Federation
 Radiative recombination in InAs/InAsSb/InAsSbP heterostructures Comprehensive studies of electroluminescence of InAs/InAsSb/InAsSbP heterostructures with different fractions of Sb in narrow-gap InAsSb layers were performed. Electroluminescent properties of the heterostructures were investigated in a wide range of both forward and reverse biases at temperature T = 77 K. It was found that in the different parts of the heterostructures, radiative recombination proceeds via interband and interface mechanisms, which manifests in the presence of two emission bands at different wavelengths in the electroluminescence spectra recorded under the forward bias. The recombination mechanisms were explained using schematic band diagrams of the heterostructures calculated for T = 77 K and both directions of the external bias. 10.18721/JPM.191.105 535.3 solid solutions InAsSb heterostructures interface recombination electroluminescence https://physmath.spbstu.ru/article/2026.87.5/
CNF RUS 39-44 Ioffe Institute Lakuntsova Olga o.e.lakuntsova@mail.ioffe.ru 0000-0001-8893-7751 Ioffe Institute of RAS Klimko Grigory Klimko@beam.ioffe.ru Ioffe Institute of RAS Sedova Irina irina@beam.ioffe.ru Ioffe Institute Myasoedov Alexander amyasoedov88@gmail.com
St. Petersburg, Russian Federation
 Ioffe Institute Semenov Aleksey semenov@beam.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Prasolov Nikita nikpras@mail.ioffe.ru Sorokin Sergey sorokin@beam.ioffe.ru Heterostructures with ultrathin InxGa1−xAs/GaAs(001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy The heterostructures with ultrathin (~220 nm) InxGa1−xAs/GaAs(001) metamorphic buffer layers with a convex indium composition profile were grown by molecular beam epitaxy and studied using structural characterization techniques. Analysis of atomic force microscopy images revealed a relationship between the surface roughness and the growth conditions of the graded layer. The density of threading dislocations in the structures with a ultra-thin graded layer was estimated as ~107 cm−2, which is consistent with the high average grading rate of ~90% In/μm. The reciprocal space maps of high-resolution X-ray diffraction measured for both symmetric (004) and asymmetric (224) reflections in grazing exit geometry are presented. 10.18721/JPM.191.106 538.911 metamorphic buffer layers convex compositional profile molecular beam epitaxy InxGa1−xAs heterostructures reciprocal space mapping atomic force microscopy energy-dispersive X-ray spectroscopy https://physmath.spbstu.ru/article/2026.87.6/
CNF RUS 45-50 St. Petersburg Electrotechnical University "LETI" Chumanov Ivan chumanov2000@yandex.ru
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Firsov Dmitrii d.d.firsov@gmail.com
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Kolyada Dmitry kolyada.dima94@mail.ru St. Petersburg Electrotechnical University "LETI" Komkov Oleg oleg_sergeevich@mail.ru
St. Petersburg, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Skvortsov Ilya i.skvortsov@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Mashanov Vladimir mash@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Loshkarev Ivan idl@isp.nsc.ru
Novosibirsk, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Timofeev Vyacheslav Vyacheslav.t@isp.nsc.ru
Novosibirsk, Russian Federation
 Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells The study of the luminescence properties of multiple Ge0.53Sn0.47/Si and Ge0.3Si0.56Sn0.14/Si quantum wells allowed the energies of interband transitions between the electron Δ subband in silicon and the hole level in the quantum well to be estimated. Temperature studies revealed an initial increase in photoluminescence intensity between 8 and 30 K, followed by a decrease at higher temperatures. Approximation of the obtained results allowed the activation energies of the processes responsible for the temperature quenching of luminescence to be determined. 10.18721/JPM.191.107 538.958 photoluminescence multiple quantum wells germanium silicon tin semiconductors solid solutions FTIR spectroscopy https://physmath.spbstu.ru/article/2026.87.7/
CNF RUS 51-55 0000-0002-4513-6345 ITMO University Ruzhevich Maxim max.ruzhevich@niuitmo.ru Ioffe Institute Mynbaev Karim mynkad@mail.ioffe.ru St. Petersburg Electrotechnical University "LETI" Firsov Dmitrii d.d.firsov@gmail.com
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Chumanov Ivan chumanov2000@yandex.ru
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Komkov Oleg oleg_sergeevich@mail.ru
St. Petersburg, Russian Federation
 0000-0001-7722-6428 Varavin Vasiliy varavin@isp.nsc.ru Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Mikhailov Nikolay mikhailov@isp.nsc.ru Photoluminescence and photoreflectance of long-wavelength HgTe/CdHgTe heterostructure   This paper presents the results of optical studies of a long-wavelength HgTe/CdHgTe heterostructure performed using photoluminescence and photoreflectance methods. Optical transitions involving several electron and hole levels were observed, with the dominant levels switching with changes in temperature. Using the photoreflectance method, optical transitions not detectable by the photoluminescence were observed. It is demonstrated that the combination of the methods allows for the most detailed evaluation of optical transitions in the HgTe/CdHgTe quantum wells. 10.18721/JPM.191.108 538.91 CdHgTe heterostructures photoluminescence photoreflectance https://physmath.spbstu.ru/article/2026.87.8/
CNF RUS 56-63 0009-0008-4344-4863 Alferov University Nikolaeva Aleksandra nikalex2000@bk.ru
St. Petersburg, Russian Federation
 Center for Photonics and 2D Materials Anikina Maria mari.a.nikina@yandex.ru 0000-0001-8726-5615 Institute of Automation and Control Processes FEB RAS Pavlov Dmitrii pavlov.dim@mail.ru Moscow Institute of Physics and Technology (National Research University) Maksimov Fedor maksimov.fm@phystech.edu 0000-0001-7143-6686 Kusnetsov Alexey alkuznetsov1998@gmail.com 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 Alferov University Sharov Vladislav vl_sharov@mail.ru
St. Petersburg, Russian Federation
 0000-0002-5376-5555 Far Eastern Federal University Kuchmizhak Aleksandr alex.iacp.dvo@mail.ru 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Photoluminescence control of WSe₂ monolayers integrated with plasmon nanobumps via strain engineering This work presents a hybrid system for photoluminescence control, consisting of a tungsten diselenide monolayer (1L-WSe₂) integrated with an array of plasmonic gold nanobumps fabricated by femtosecond laser printing. This technique allows precise tuning of the plasmonic resonance in these structures by controlling their geometry. It is shown that this integration provides a dual mechanism for enhancing and controlling photoluminescence (PL). First, the plasmonic resonance significantly amplifies the PL emission near the nanobump due to exciton-plasmon interaction. Second, the deformation of the WSe₂ monolayer on the nanobump leads to a red shift of the PL peak, resulting from modification of the bandgap. A key feature of this system is the ability to control the spectrum by selecting the pump wavelength: changing the excitation energy affects the correlation between the neutral exciton (X⁰) and the low-energy dark exciton/trion (Xᴰ/ᵀ) states. Low-temperature microspectroscopy further revealed a deformation-induced redistribution of intensity from the neutral exciton (X⁰) to low-energy states, including the dark exciton/trion complex (Xᴰ/ᵀ). These results establish a foundation for a platform of spectrally tunable light sources based on hybrid exciton-plasmon-strain interactions, which offers a pathway for the advancement of nanophotonics and the development of next-generation optoelectronic devices. 10.18721/JPM.191.109 535.372 WSe2 emitter nanobump photoluminescence https://physmath.spbstu.ru/article/2026.87.9/
CNF RUS 64-68 0000-0002-0724-6391 Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch) RAS Mashinsky Konstantin konstantin-m92@yandex.ru 0000-0003-1303-6443 Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch) RAS Popov Vyacheslav popov_slava@yahoo.co.uk Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), RAS Fateev Denis fateevdv@yandex.ru
Saratov, Russian Federation
 Hybridization between the plasmonic modes of a graphene square screened by a metal gate and the Fabry–Pérot resonances in the barrier layer Hybridization of fundamental and higher plasmonic modes of a graphene square screened by a metal back gate with the Fabry–Pérot resonances in barrier layer is predicted. We show that the absorption cross-section of higher plasmon modes in a screened graphene square is greater than that in the unscreened structure by an order of magnitude. 10.18721/JPM.191.110 621.315.592 graphene plasmon Fabry–Pérot resonance terahertz https://physmath.spbstu.ru/article/2026.87.10/
CNF RUS 69-74 Russian-Armenian University Gevorgyan Davit davitgevorgyan2000@gmail.com Institute of Chemical Physics after A.B. Nalbandyan Gavalajyan Sargis sargis.gavalajyan@rau.am Peter the Great St. Petersburg Polytechnic University Vinnichenko Maxim mvin@spbstu.ru Russian-Armenian University Kazaryan Eduard edghaz@mail.ru Interband absorption and photoluminescence in lens-shaped quantum dots: an adiabatic approach We present an analytic-numerical framework for carriers and excitons in lens-shaped (semi-ellipsoidal) quantum dots within the effective-mass and envelope-function approximations, assuming hard-wall confinement. Exploiting the geometry, we use an adiabatic separation of fast (axial) and slow (planar) motion to obtain closed-form single-particle states and energies. The exciton binding energy is evaluated numerically in first-order perturbation theory using the analytic envelopes. Interband absorption follows from bright-state selection rules, and photoluminescence is obtained from absorption via the van Roosbroeck–Shockley relation with Lorentzian broadening. It is shown that single-particle confinement energies are much more sensitive to the dot height than to the lateral size, states with higher axial quantum number lie well above the lowest branch, the Coulomb binding decreases with increasing size, exhibiting comparable fractional sensitivity to both the axial and planar semi-axes and grouping primarily by radial quantum number. The framework yields compact formulas, transparent scaling trends, and interpretable spectra for the design and analysis of lens-shaped quantum dots. 10.18721/JPM.191.111 538.958 quantum dots lens-shaped quantum dots exciton photoluminescence https://physmath.spbstu.ru/article/2026.87.11/
CNF RUS 75-80 Alferov University Lutsevich Marina malysh_ma@spbau.ru Alferov University Sharov Vladislav vl_sharov@mail.ru
St. Petersburg, Russian Federation
 0000-0002-3640-677X Ioffe Institute Kaveev Andrey kaveev@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0001-5547-9387 Peter the Great St. Petersburg Polytechnic University Fedorov Vladimir fedorov_vv@spbstu.ru 0000-0001-9792-045X Peter the Great St. Petersburg Polytechnic University Mukhin Ivan muhin_is@spbstu.ru Role of the buffer layer on the mechanical strength of nanowire-substrate interface Atomic force microscopy has been utilized to study the structure and mechanical strength of the epitaxial interfaces of InAs and GaP nanowires grown on Si substrates. Measuring the elastic forces during the controlled cleavage of individual crystals carried out by lateral mechanical action of atomic force microscope probe allowed us to establish a correlation between the strength of the epitaxial interface and the level of lattice mismatch. It was shown that InAs nanowires grown on InAs buffer layer demonstrate different mechanical strength compared with the ones grown directly on Si. Meanwhile, mechanical strength of GaP nanowires grown on GaP buffer is of the same order as that of GaP nanowires grown directly on Si. Analysis of the topography after nanowire removal confirmed differences in the failure mechanisms of the interface. 10.18721/JPM.191.112 538.911 nanowires epitaxial interface GaP InAs atomic force microscopy https://physmath.spbstu.ru/article/2026.87.12/
CNF RUS 81-85 ITMO University Tatarinov Dmitry dmitry.tatarinov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Sapozhnikova Elizaveta e.sapozhnikova@metalab.ifmo.ru ITMO University Semyonov Dmitrii dmitrii.semenov@metalab.ifmo.ru 0000-0002-1793-6812 Skolkovo Institute of Science and Technology Pushkarev Anatoly anatoly.pushkarev@metalab.ifmo.ru Perovskite microwires generating red laser emission   Sources of stimulated coherent emission in all visible range are highly demanded for numerous applications in photonic and optoelectronic devices. In that regard, metal halide perovskite-based microlasers are established to be promising objects due to their low-threshold and lasing with high quality factor (more than 1000) at room temperature. However, there are still challenges in synthesis of stable and uniform crystals emitting red light. This work presents a novel sublimation synthesis method to produce mixed-anion perovskite CsPb(Br,I)3 microwires that generate laser emission in red region of visible range. An increase in the iodine content in the structure contributes to a red-shift in photoluminescence from 530 nm to 680 nm. CsPb(Br,I)3 microwires demonstrate multimode laser generation with threshold at 70 mJ/cm2 and Q-factor near 1500. A uniform distribution of bromine and iodine ions in the structure is confirmed by energy dispersive x-ray analysis. Additionally, study of surface morphology by scanning electron microscopy showed core-shell like structure, which can improve long-term stability of obtained crystals. Our study reveals the sublimation as a promising synthesis method to produce low-threshold red microlasers that emit light at room temperature. 10.18721/JPM.191.113 53.093 halide perovskites lasing sublimation red-shift photoluminescence https://physmath.spbstu.ru/article/2026.87.13/
CNF RUS 86-91 Nekrasov Aleksey nekrasov.74as@gmail.com
Ioffe Institute
 Ioffe Institute Zolotarev Vasily zolotarev.bazil@mail.ioffe.ru Ioffe Institute Oreshko Ivan ioreshko@mail.ioffe.ru 0000-0003-4851-3641 Ioffe Institute Slipchenko Sergey serghpl@mail.ioffe.ru Ioffe Institute Pikhtin Nikita nike@hpld.ioffe.ru Beam divergence of surface-emitting semiconductor laser with resonator based on two-dimensional photonic crystal Theoretical calculations of the resonator modes optical characteristics of a semiconductor surface-emitting laser with a resonator based on a two-dimensional photonic crystal with a square lattice were carried out in the paper. Photonic crystal provides distributed feedback in plane of heterostructure layers and determines diffraction of radiation to the surface of the laser structure. Output beam emitted in the direction normal to the surface of such devices allows decreasing the beam divergence and increasing the output optical power. However, an increase in radiation aperture also affects the mode composition of the laser emission. The dependences of resonator modes optical losses and beam divergence on cavity size were obtained. A suggestion of the optimal cavity length to achieve single-mode operation with small output laser beam divergence angle was made. 10.18721/JPM.191.114 621.373.826 photonic crystal surface-emitting laser semiconductor laser resonator beam divergence https://physmath.spbstu.ru/article/2026.87.14/
CNF RUS 92-97 St. Petersburg Electrotechnical University "LETI" Yashkin Zakhar a3691215@yandex.ru St. Petersburg Electrotechnical University "LETI" Zakharchenko Mikhail mikhailvzakh@gmail.com Saint Petersburg Electrotechnical University LETI Glinsky Gennady genaglinskii@mail.ru
Russia, 197376, St.Petersburg, Professor Popov street, 5
 Band structure of PT-symmetric phononic crystals In the present paper, the theory of phononic crystals is generalized to the case of periodic media with anisotropic elastic properties, as well as to the PT-symmetric structures with gain and loss. An operator form of the equation for a stationary elastic wave in a crystal is proposed. A generalized condition of PT symmetry for systems with anisotropic elastic properties is obtained. 10.18721/JPM.191.115 534-16 phononic crystal PT symmetry exceptional points https://physmath.spbstu.ru/article/2026.87.15/
CNF RUS 98-104 0000-0002-0789-4241 Alferov University Egorov Anton anton.egorov@connector-optics.com
St. Petersburg, Russian Federation
 Babichev Andrei scientific.ocean@gmail.com. Ioffe Institute Kovach Yakov yakovachyakov@gmail.com
St. Petersburg, Russian Federation
 Dragunova Anna anndra@list.ru National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Zadiranov Yuri Ioffe Institute Salii Yulia Guseva.Julia@mail.ioffe.ru Kulagina Marina M. Marina.Kulagina@mail.ioffe.ru Ioffe Institute Bobrov Mikhail bobrov.mikh@gmail.com
St. Petersburg, Russian Federation
 0000-0002-2181-5300 Ioffe Institute Vasil’ev Alexey Vasiljev@mail.ioffe.ru Ioffe Institute Blokhin Sergei blokh@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0003-2500-1715 Ioffe Institute Maleev Nicolai maleev.beam@mail.ioffe.ru
St. Petersburg, Russian Federation
 ITMO University Karachinsky Leonid lkarachinsky@itmo.ru
St. Petersburg, Russian Federation
 ITMO University Novikov Innokenty innokenty.novikov@itmo.ru
St. Petersburg, Russian Federation
 Room temperature microlasers based on quasi-planar geometry The planar microcavity structure was grown using molecular-beam epitaxy. Single-mode lasing was observed at a wavelength of 960 nm for pillars with a diameter of 15 μm. At 300 K, the lasing threshold was approximately 30 mW. Increasing the pump power to 2.7 times the threshold power resulted in a mode energy shift of approximately 1 meV. This shift in the mode energy position corresponds to approximately 12 degrees of laser heating. 10.18721/JPM.191.116 535.37, 535.33 molecular-beam epitaxy micropillar cavity gallium arsenide InGaAs Stransky-Krastanow growth mode https://physmath.spbstu.ru/article/2026.87.16/
CNF RUS 105-110 Ioffe Institute Bobrov Mikhail bobrov.mikh@gmail.com
St. Petersburg, Russian Federation
 Ioffe Institute Blokhin Sergei blokh@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Kovach Yakov yakovachyakov@gmail.com
St. Petersburg, Russian Federation
 0000-0002-3449-8711 Ioffe Institute Blokhin Aleksey Aleksey.Blokhin@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0003-2500-1715 Ioffe Institute Maleev Nicolai maleev.beam@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0002-7221-0117 Ioffe Institute Kuzmenkov Aleksandr kuzmenkov@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Marchiy Mariya M.N.Marchij@mail.ioffe.ru 0000-0002-2181-5300 Ioffe Institute Vasil’ev Alexey Vasiljev@mail.ioffe.ru Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs This paper presents the results of experimental investigations of low-frequency relative intensity noise and phase noise of single-mode 89X nm-range vertical-cavity surface-emitting lasers (VCSELs) with different photon lifetimes. The lasers are based on a hybrid vertical microcavity design with carrier injection through intracavity contact layers and composite Bragg gratings. Analysis of the low-frequency amplitude noise of the VCSELs showed that the noise spectrum in the frequency range from 100 Hz to 10 kHz has a 1/f-noise trend, transitioning to white noise at frequencies above 10 kHz. The dependence of the amplitude noise on the laser's optical power has a W-shaped form. An increase in temperature leads to growth in both amplitude and phase noise, both at a fixed operating current and at comparable optical power of laser radiation. In the frequency range of 1–100 kHz, the achieved amplitude noise level does not exceed –120 dB/Hz. Meanwhile, in the 10–100 kHz frequency range, the phase noise level saturates at 0.6–1.1·109 Hz2/Hz (depending on temperature and optical power) for devices with a characteristic photon lifetime of ~ 8.5 ps. The obtained results allow the use of the developed VCSELs in compact quantum sensors of various types. 10.18721/JPM.191.117 621.373.8 vertical cavity surface emitting laser relative intensity noise amplitude noise phase noise frequency noise quantum sensors https://physmath.spbstu.ru/article/2026.87.17/
CNF RUS 111-116 Ioffe Institute Kornienko Polina p.d.kornienko@mail.ioffe.ru Ioffe Institute Epoletov Vadim Vadep@mail.ioffe.ru Ioffe Institute Levina Svetlana levina@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Larionov Valeri larion@scell.ioffe.ru Ioffe Institute Mintairov Mikhail mamint@mail.ioffe.ru Ioffe Institute Nakhimovich Maria nmar@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Shvarts Maxim shvarts@scell.ioffe.ru Illumination and temperature dependence of optical interactions in multijunction solar cells Optical interactions in multijunction solar cells result from radiative charge carrier recombination in a wide-bandgap subcell, which generates additional photocurrent in a narrower-bandgap subcell via photovoltaic conversion of the emitted photons. This paper proposes a method for the experimental determination of the optical interactions efficiency, including the measurement of its limiting (saturation) value, γS. The method was tested on triple-junction GaInP/GaAs/Ge solar cells. The parameter γS was recorded at ultra-high current densities through the p–n junction, achieved using small-area samples and specialized equipment. The relationship between the obtained values and the properties of the semiconductor structure is discussed, including the temperature dependence of the radiative recombination efficiency (luminescence intensity). 10.18721/JPM.191.118 53 multijunction solar cells optical interactions electroluminescence intensity saturation current https://physmath.spbstu.ru/article/2026.87.18/
CNF RUS 117-122 Ioffe Institute Prudchenko Kseniia prudchenkokk@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0003-1812-3714 Ioffe Institute Kontrosh Evgeniy kontrosh@mail.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Tolkachev Ivan TolkachevIA@mail.ioffe.ru
St. Petersburg, Russian Federation
 R&D Center TFTE LLC Abolmasov Sergey S.Abolmasov@hevelsolar.com 0000-0003-4858-7544 Ioffe Institute Kalinovskii Vitaliy vitak.sopt@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0002-5226-1101 Ioffe Institute Terukov Evgenyi eug.terukov@mail.ioffe.ru
St. Petersburg, Russian Federation
 Prospects of hybrid bifacial four-junction solar cell for concentrating photovoltaics A hybrid monolithic four-junction solar cell composed of GaInP/Ga(In) As/Ge electricity-generating linear arrays arranged in an n-α-Si:H/(p)c-Si:(Ga)/p-a-Si:H bifacial photoactive heat-dissipating substrate was investigated as part of a concentrator photovoltaic module. The module provides a specific power output ≤ 500 W/m2 (AM0, 1367 W/m2) at the beginning of life, taking into account the converted the Earth albedo. The damage coefficient of effective diffusion length for minority charge carriers in the photoactive heat-dissipating substrate has been determined as KL = 1·10−11 at 1 MeV electron fluence up to 1·1015cm−2. The anticipated lifespan of the monolithic hybrid four-junction solar cell in the module on geostationary orbit is projected to be ≤ 15 years. Accounting for the albedo effects, it does not only increase the generated electrical power but also reduces thermal stress on the spacecraft’s solar panel. 10.18721/JPM.191.119 629.7.064.56 hybrid four-junction solar cell concentrator photovoltaic module albedo of the Earth GaInP/Ga(In)As/Ge electricity-generating linear arrays bifacial photoactive heat dissipating substrate damage coefficient geostationary orbit https://physmath.spbstu.ru/article/2026.87.19/
CNF RUS 123-128 0009-0008-5664-6130 Ioffe Institute Malevskaya Anastasia anmalevskaya@mail.ioffe.ru Ioffe Institute Mintairov Mikhail mamint@mail.ioffe.ru Ioffe Institute Evstropov Valerii vvevstropov@gmail.com
St. Petersburg, Russian Federation
 Ioffe Institute Malevskiy Dmitriy dmalevsky@scell.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Malevskaya Aleksandra amalevskaya@mail.ioffe.ru Ioffe Institute Mintairov Sergei mintairov@scell.ioffe.ru Ioffe Institute Kalyuzhniy Nikolai nickk@mail.ioffe.ru Modeling the current-voltage characteristics and optimizing the laser-powered photovoltaic converters with a spot-type rear contact A method for comprehensively modeling the current-voltage characteristics of laser-powered photovoltaic converters (PVCs) with spot-type rear contact is proposed. The method accounts for both optical losses caused by shading of the photoactive region and electrical losses caused by radial current spreading to the spot-type rear contacts. A balance between these factors is achieved at specific values of the diameter of spots and distance between contacts, which could be determined using the proposed method. The geometric parameters of the rear contacts (diameter and spot pitch) were optimized to maximize the laser radiation conversion efficiency of the AlGaAs/GaAs PVCs. 10.18721/JPM.191.120 621.315.592 photovoltaic converters spot-type contact current spreading current-voltage characteristics https://physmath.spbstu.ru/article/2026.87.20/
CNF RUS 129-133 Arteev Dmitri ArteevDS@mail.ioffe.ru Ioffe Institute Sakharov Alexey val@beam.ioffe.rssi.ru Ioffe Institute Nikolaev Andrei Aen@mail.ioffe.ru Ioffe Institute Zavarin Evgenii EZavarin@mail.ioffe.ru Ioffe Institute Rodin Sergey s_rodin77@mail.ru Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS Tsatsulnikov Andrey andrew@beam.ioffe.ru Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors We theoretically study AlGaN/AlN/GaN heterostructures aimed at optimizing the AlGaN barrier for GaN-based high-electron-mobility transistors (HEMTs). Self-consistent Poisson–Schrödinger calculations combined with semi-empirical transport modeling are used to evaluate the two-dimensional electron gas (2DEG) concentration, sheet resistance, and saturation drain current as functions of barrier thickness and aluminum mole fraction. Technologically relevant constraints, including unintentional Ga incorporation, 2DEG-density-dependent mobility and saturation velocity, and the critical thickness of AlGaN coherently strained to GaN, are taken into account. Well-defined optimal barrier thicknesses minimize the sheet resistance to RS ~250 Ω/□, while the saturation drain current increases with barrier thickness and Al content, limited by strain-induced cracking. The results provide practical guidance for barrier design in GaN-based HEMTs. 10.18721/JPM.191.121 621.315.592 GaN AlGaN HEMT two-dimensional electron gas Poisson–Schrödinger equations sheet resistance critical thickness https://physmath.spbstu.ru/article/2026.87.21/
CNF RUS 134-140 0000-0002-7292-6131 Moscow Institute of Physics and Technology (National Research University) Safonov Ilya Moscow Institute of Physics and Technology (National Research University) Svintsov Dmitry svintcov.da@mipt.ru Response times of two-dimensional photodetectors limited by intrinsic resistance and capacitance Most contemporary architectures of photodetectors based on two-dimensional materials include global gates for carrier density control and local p–n junctions in the channel. We study the dependence of photocurrent in such detectors on the light modulation frequency, fully taking into account the effects of distributed resistance and gate-channel capacitance. The decay of photocurrent with modulation frequency governs the response time. We find that the maximum modulation frequency is largely determined by the position of light-sensitive junction with respect to the middle of the channel. Largest modulation frequency is achieved for junctions in immediate vicinity of either source or drain contacts, while fast roll-off of the modulation characteristic is observed for junction in the middle of the channel. 10.18721/JPM.191.122 538.9 two-dimensional materials photodetectors high-frequency photoresponse distributed electronic circuits https://physmath.spbstu.ru/article/2026.87.22/
CNF RUS 141-145 Institute of Solid State Physics RAS Vassilyev Sergey servassilyev@gmail.com Institute of Solid State Physics RAS Khrapai Vadim dick@issp.ac.ru Institute of Solid State Physics RAS Tikhonov Evgeny tikhonov@issp.ac.ru Time-resolved measurement of resistance This article discusses and implements a method for measuring sharp jumps in sample resistance with time resolution of 100 ns at a temperature of 4.2 K using the ATF-55143 transistor as an example. The operating principle of the circuit, calibration, and accounting for parasitic capacitance are described. 10.18721/JPM.191.123 53.083 time-resolved measurements radio frequency measurements resistance change https://physmath.spbstu.ru/article/2026.87.23/
CNF RUS 146-150 ITMO University Kalantaevskii Ivan royal37lol@gmail.com ITMO University Gorelkina Tatiana tatiana.gorelkina@metalab.ifmo.ru ITMO University Kravtsov Vasily vasily.kravtsov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 Investigation of self-hybridized waveguide exciton-polaritons in the two-dimensional antiferromagnet CrSBr at room temperature The interaction between light and excitons in van der Waals materials offers new avenues for exploring strong coupling in quantum systems. Exciton-polaritons, arising from the coherent hybridization of excitons and photons, provide a unique platform for studying collective interactions, optical anisotropy, and tunable responses in low-dimensional structures. This work investigates the self-hybridization of photonic and excitonic modes in a waveguide based on the two-dimensional antiferromagnetic semiconductor CrSBr. Using angle-resolved photoluminescence and numerical modeling, we demonstrate that the pronounced anisotropy of exciton localization along the crystallographic b-axis leads to strong interaction with the waveguide mode. The observed anticrossing of dispersion curves is quantitatively described by a coupled oscillator model with a coupling strength of ~185 meV, providing direct evidence for the formation of self-hybridized exciton-polaritons. In the orthogonal polarization, no such interaction occurs, and only directional waveguide emission is detected. These findings pave the way for miniaturized polaritonic devices based on van der Waals magnets, where light matter interaction can be controlled by both waveguide geometry and magnetic order. 10.18721/JPM.191.124 538.958 two-dimensional semiconductors exciton-photon coupling self-hybridization angle-resolved photoluminescence https://physmath.spbstu.ru/article/2026.87.24/
CNF RUS 151-155 ITMO University Sapozhnikova Elizaveta e.sapozhnikova@metalab.ifmo.ru ITMO University Semyonov Dmitrii dmitrii.semenov@metalab.ifmo.ru 0000-0003-4552-3991 ITMO University Anoshkin Sergey sergey.anoshkin@metalab.ifmo.ru ITMO University Tatarinov Dmitry dmitry.tatarinov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 0000-0002-6222-5526 Skolkovo Institute of Science and Technology Verkhogliadov Grigorii g.verkhogliadov@skoltech.ru 0000-0002-1793-6812 Skolkovo Institute of Science and Technology Pushkarev Anatoly anatoly.pushkarev@metalab.ifmo.ru Second harmonic generation in iodine quasi-2D halide perovskite crystals Layered quasi-two-dimensional halide perovskites have attracted significant attention as exceptional materials for nonlinear optics and photonics applications due to their remarkable photophysical properties. The incorporation of quasi-2D spacer ligands into the halide perovskite framework induces alterations in the crystal structure and leads to changing its properties due to quantum confinement effects. Notably, certain crystal structures may exhibit a lack of center symmetry, facilitating the observation of second harmonic generation. Furthermore, the optical properties of halide perovskite crystals can vary dramatically based on the composition of the quasi-2D spacers. In this study, we investigate the second harmonic generation signal of two compositions: PEA2MAPb2I7 and a novel methyl-substituted PEA derivative, MePEA2MAPb2I7. Our results reveal distinct second-harmonic generation characteristics for both compositions and demonstrate enhanced stability in MePEA-based crystals. This work contributes to the understanding of the relationship between crystal composition and nonlinear optical behavior in quasi-2D perovskites, paving the way for future advancements in photonic applications. 10.18721/JPM.191.125 535.015 quasi-2D halide perovskites second harmonic generation photoluminescence non-linear optics https://physmath.spbstu.ru/article/2026.87.25/
CNF RUS 156-161 ITMO University Ekgardt Alexey aleksei.ekgardt@metalab.ifmo.ru ITMO University Sapozhnikova Elizaveta e.sapozhnikova@metalab.ifmo.ru 0000-0002-6222-5526 Skolkovo Institute of Science and Technology Verkhogliadov Grigorii g.verkhogliadov@skoltech.ru 0000-0002-1793-6812 Skolkovo Institute of Science and Technology Pushkarev Anatoly anatoly.pushkarev@metalab.ifmo.ru The role of charge carrier diffusion in halide perovskite luminophores with memory for optical computing The optical elements that can combine memory and signal modulation have become a topic of interest in the field of neuromorphic computing systems. In particular, the optical analogue of a memristor called memlumor exhibits promising features in which the change of the output luminescence depends not only on the excitation light signal but also on the state of the material. Metal halide perovskite luminophores are considered to be suitable for memlumor implementation as they exhibit modulation of photoluminescence due to the interaction of structure defects with the environment and previous interactions, thereby possessing memory. Luminescence in perovskite materials is described via Shockley–Reed–Hall model which takes into account charge carriers dynamics in the structure. Additionally, the diffusion of charge carriers also plays a key role and highly depends on memlumor’s size. This paper explores the perovskite memlumor’s functionality based on their characteristic size to identify optimal parameters and suitable designs for future optical neuromorphic computing architectures. 10.18721/JPM.191.126 53.093 neuromorphic systems memlumors metal halide perovskites photoluminescence charge carrier diffusion quantum yield time-resolved photoluminescence Shockley–Read–Hall model optical computing systems https://physmath.spbstu.ru/article/2026.87.26/
CNF RUS 162-167 ITMO University Kolesnikova Anna anna.kolesnikova@metalab.ifmo.ru 0000-0003-2423-7945 ITMO University Sinelnik Artem sinelnik@metalab.ifmo.ru ITMO University Litvinov Daniil daniil.litvinov@metalab.ifmo.ru Switching of Kerker effect from single Sb2Se3 nanoparticles The Kerker effect is one of the fundamental concepts in nanophotonics for controlling scattered radiation from single nanoparticles. It is based on the interaction of electric and magnetic dipoles, which, as a result of interference, determine the directional pattern of scattered radiation. The implementation of this principle allows the creation of nanoantennas that effectively redirect radiation from other nanoscale sources. This work demonstrates the possibility of dynamically controlling the directional pattern of scattered radiation by using nanoparticles made of the phase-change material Sb2Se3. The “ON” and “OFF” modes of directional scattering are shown when the phase of the material changes. These results may open up a new path in the implementation of dynamically changing nanoantennas for applications in quantum cryptography and optical telecommunications. 10.18721/JPM.191.127 535.3 nanoparticles phase change materials Kerker effect https://physmath.spbstu.ru/article/2026.87.27/