Articles by keywords "epitaxy"
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 3
- 221
- Pages: 155-159
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 4
- 237
- Pages: 62-67
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 7
- 728
- Pages: 249-254
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
Babichev A.V.
Nadtochiy A.M.
Tkach Yu.S.
Kryzhanovskaya N.V.
Blokhin S.A.
Nevedomskiy V.N.
Gladyshev A.G.
Maleev N.A.
Karachinsky L.Ya.
Novikov I.I.
- Year: 2023
- Volume: 16
- Issue: 3.2
- 6
- 818
- Pages: 50-55
Germanium polytypes formation on AlGaAs nanowire surface
- Year: 2023
- Volume: 16
- Issue: 3.1
- 7
- 840
- Pages: 289-293
Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 5
- 854
- Pages: 193-197
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 845
- Pages: 122-127
Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 912
- Pages: 112-116
Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties
Chernev I.M.
Subbotin E.Yu.
Argunov E.V.
Kozlov A.G.
Gerasimenko A.V.
Galkin N.G.
Poliakov M.V.
Volkova L.S.
Dudin A.A.
Gouralnik A.S.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 1139
- Pages: 106-111
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 907
- Pages: 79-83
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 8
- 853
- Pages: 74-78
Properties of ultrathin epitaxial NbNx film on C-cut sapphire
- Year: 2023
- Volume: 16
- Issue: 3.1
- 1
- 871
- Pages: 69-73
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
Chernenko N.E.
Makhov I.S.
Balakirev S.V.
Kirichenko D.V.
Shandyba N.A.
Kryzhanovskaya N.V.
Solodovnik M.S.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 832
- Pages: 64-68
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 1056
- Pages: 53-58
Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 848
- Pages: 41-46
Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique
- Year: 2023
- Volume: 16
- Issue: 1.3
- 21
- 1499
- Pages: 39-43
Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 7
- 1351
- Pages: 224-228
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
Bondarenko D.N.
Gridchin V.O.
Kotlyar K.P.
Reznik R.R.
Kirilenko D.A.
Baranov A.I.
Dragunova A.S.
Kryzhanovskaya N.V.
Maksimova A.A.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 39
- 1634
- Pages: 179-184
1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission
Andryushkin V.V.
Blokhin S.A.
Bobrov M.A.
Blokhin A.A.
Babichev A.V.
Gladyshev A.G.
Novikov I.I.
Karachinsky L.Ya.
Kolodeznyi E.S.
Voropaev K.O.
Egorov A.Yu.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 13
- 1419
- Pages: 153-159
1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs
Rochas S.S.
Blokhin S.A.
Babichev A.V.
Karachinsky L.Ya.
Novikov I.I.
Blokhin A.A.
Bobrov M.A.
Maleev N.A.
Andryushkin V.V.
Bougrov V.E.
Gladyshev A.G.
Melnichenko I.A.
Voropaev K.O.
Zhumaeva I.O.
Ustinov V.M.
Li H.
Tian S.
Han S.
Sapunov G.A.
Egorov A.Yu.
Bimberg D.
- Year: 2023
- Volume: 16
- Issue: 1.1
- 33
- 1572
- Pages: 456-462
Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties
- Year: 2023
- Volume: 16
- Issue: 1.1
- 5
- 1318
- Pages: 363-368
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 17
- 1596
- Pages: 341-345
Formation of a dielectric sublayer heterostructure of lead-tin telluride
- Year: 2023
- Volume: 16
- Issue: 1.1
- 12
- 1502
- Pages: 158-161
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
Reznik R.R.
Gridchin V.O.
Kotlyar K.P.
Dragunova A.S.
Kryzhanovskaya N.V.
Samsonenko Yu.B.
Soshnikov I.P.
Khrebtov A.I.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.1
- 16
- 1452
- Pages: 153-157
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
Balakirev S.V.
Lakhina E.A.
Kirichenko D.V.
Chernenko N.E.
Shandyba N.A.
Eremenko M.M.
Solodovnik M.S.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 1945
- Pages: 315-319
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
Gridchin V.O.
Reznik R.R.
Kotlyar K.P.
Shugabaev T.M.
Dragunova A.S.
Kryzhanovskaya N.V.
Cirlin G.E.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 1914
- Pages: 311-314
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 25
- 1958
- Pages: 281-284
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
Sinitskaya O.A.
Shubina K.Yu.
Mokhov D.V.
Uvarov A.V.
Filatov V.V.
Mizerov A.M.
Timoshnev S.N.
Nikitina E.V.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 1986
- Pages: 157-162
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
Nikitina L.S.
Lakhina E.A.
Eremenko M.M.
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Ageev O.A.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 1921
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 20
- 1894
- Pages: 54-58
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 1889
- Pages: 48-53
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 7
- 2008
- Pages: 42-47
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 10
- 1909
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 22
- 2013
- Pages: 31-35
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 17
- 1940
- Pages: 145-149
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 24
- 1970
- Pages: 75-79
Influence of aluminum content in blocking layer on properties of green InGaAlN LEDs
- Year: 2013
- Issue: 4
- 356
- 6152
- Pages: 31-36
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 5695
- Pages: 28-31