Articles by keywords "epitaxy"

Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles

Physical electronics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 119
  • Pages: 172-177

Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 1
  • 144
  • Pages: 115-118

Determination of the length of the 2×N superstructure during the synthesis of Ge on Si(001) at different temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 126
  • Pages: 91-95

Localized Ga droplets formation on nanopatterned silicon substrates

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 1
  • 139
  • Pages: 57-59

Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

Physical materials technology
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 3
  • 146
  • Pages: 278-282

Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 126
  • Pages: 152-155

MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 197
  • Pages: 148-151

Si-based photodetector with an Mg2Si contact layer for SWIR range

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 148
  • Pages: 53-58

Influence of the growth regime on the transport properties of doped Mg2Si films

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 171
  • Pages: 40-43

Synthesis of Mg2Si-based core-shell nanowires

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 1
  • 145
  • Pages: 36-39

Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 183
  • Pages: 19-22

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 40
  • 3750
  • Pages: 9-21

Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 6
  • 3484
  • Pages: 140-144

Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 16
  • 3409
  • Pages: 117-121

Epitaxial growth AlGaAs from Bi-containing melts

Structure growth, surface, and interfaces
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 16
  • 3737
  • Pages: 17-21

Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 12
  • 2413
  • Pages: 275-278

Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 24
  • 2327
  • Pages: 182-186

Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 9
  • 2366
  • Pages: 139-142

Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 20
  • 2450
  • Pages: 84-87

Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 18
  • 2387
  • Pages: 71-77

Mg2Si synthesis on silicon crystals with different aspect ratio

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 22
  • 2480
  • Pages: 31-35

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2816
  • Pages: 306-309

Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 21
  • 2786
  • Pages: 233-237

Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2886
  • Pages: 100-104

Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2649
  • Pages: 79-83

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 12
  • 2644
  • Pages: 38-42

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 19
  • 2652
  • Pages: 28-33

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 44
  • 3910
  • Pages: 120-133

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 14
  • 3089
  • Pages: 155-159

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 46
  • 3157
  • Pages: 62-67

Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 16
  • 3882
  • Pages: 249-254

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 20
  • 4347
  • Pages: 50-55

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 14
  • 3805
  • Pages: 289-293

Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 4167
  • Pages: 193-197

Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 21
  • 4044
  • Pages: 122-127

Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 4038
  • Pages: 112-116

Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 52
  • 4997
  • Pages: 106-111

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 16
  • 4136
  • Pages: 79-83

Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 21
  • 4100
  • Pages: 74-78

Properties of ultrathin epitaxial NbNx film on C-cut sapphire

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 4128
  • Pages: 69-73

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 3912
  • Pages: 64-68

Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 38
  • 4638
  • Pages: 53-58

Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 4112
  • Pages: 41-46

Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 41
  • 4470
  • Pages: 39-43

Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 15
  • 4577
  • Pages: 224-228

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 66
  • 5066
  • Pages: 179-184

1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 22
  • 4504
  • Pages: 153-159

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 47
  • 4812
  • Pages: 456-462

Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 12
  • 4389
  • Pages: 363-368

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 30
  • 4848
  • Pages: 341-345

Formation of a dielectric sublayer heterostructure of lead-tin telluride

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 19
  • 4524
  • Pages: 158-161

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 24
  • 4495
  • Pages: 153-157

Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 19
  • 5107
  • Pages: 315-319

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 5240
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 38
  • 5292
  • Pages: 281-284

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 35
  • 5063
  • Pages: 157-162

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 23
  • 5030
  • Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 24
  • 5044
  • Pages: 54-58

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 4954
  • Pages: 48-53

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 5305
  • Pages: 42-47

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 15
  • 5111
  • Pages: 36-41

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 5380
  • Pages: 31-35

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 30
  • 5187
  • Pages: 145-149

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 32
  • 5110
  • Pages: 75-79

Influence of aluminum content in blocking layer  on properties of green InGaAlN LEDs

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 357
  • 8974
  • Pages: 31-36

Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 8691
  • Pages: 32-36

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 8685
  • Pages: 28-31