Articles by keywords "quantum"
The role of charge carrier diffusion in halide perovskite luminophores with memory for optical computing
- Year: 2026
- Volume: 19
- Issue: 1.1
- 9
- 754
- Pages: 156-161
Analysis of the low-frequency noise of 89X nm-range single-mode VCSELs
- Year: 2026
- Volume: 19
- Issue: 1.1
- 4
- 782
- Pages: 105-110
Interband absorption and photoluminescence in lens-shaped quantum dots: an adiabatic approach
- Year: 2026
- Volume: 19
- Issue: 1.1
- 6
- 700
- Pages: 69-74
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 11
- 715
- Pages: 45-50
Measurement of the timing jitter of a low-noise single photon detector
- Year: 2026
- Volume: 19
- Issue: 1
- 12
- 1051
- Pages: 121-132
Hong–Ou–Mandel interference on free charged particles
- Year: 2025
- Volume: 18
- Issue: 3.2
- 8
- 1256
- Pages: 233-236
Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces
- Year: 2025
- Volume: 18
- Issue: 3.2
- 7
- 1267
- Pages: 115-118
Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region
- Year: 2025
- Volume: 18
- Issue: 3.2
- 11
- 1224
- Pages: 29-32
Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 1219
- Pages: 237-241
Optical properties of disk microresonators based on wide-bandgap III-N materials
- Year: 2025
- Volume: 18
- Issue: 3.1
- 9
- 1259
- Pages: 209-213
MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions
- Year: 2025
- Volume: 18
- Issue: 3.1
- 10
- 1340
- Pages: 148-151
Growth of GaN nanowires with InN inserts by PA-MBE
- Year: 2025
- Volume: 18
- Issue: 3.1
- 8
- 1237
- Pages: 139-142
Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 16
- 1412
- Pages: 125-128
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 55
- 5078
- Pages: 9-21
Effect of illumination on positive magnetoresistance of high-mobility two-dimensional electron gas in GaAs/AlAs heterostructure
- Year: 2025
- Volume: 18
- Issue: 1.1
- 13
- 4538
- Pages: 67-71
Magnetic field effect on interface states in ZnSe/BeTe quantum well structures with no common atom
- Year: 2025
- Volume: 18
- Issue: 1.1
- 9
- 4609
- Pages: 52-57
A method for measuring the direction of the geomagnetic field to correct of the onboard rubidium atomic clock frequency using an Mz-magnetometer
- Year: 2025
- Volume: 18
- Issue: 1
- 29
- 5150
- Pages: 94-102
Fluorescent properties of boron nitride quantum dots depending on functionalizing ligands
- Year: 2024
- Volume: 17
- Issue: 3.2
- 28
- 3462
- Pages: 297-300
Security of BB84-like protocol on coherent states with different intensities
- Year: 2024
- Volume: 17
- Issue: 3.2
- 12
- 3423
- Pages: 230-235
Mode leakage into substrate in microdisk lasers
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 3445
- Pages: 212-216
Modeling the dynamics and properties of the squeezed state of light in a phase modulator
- Year: 2024
- Volume: 17
- Issue: 3.2
- 15
- 3589
- Pages: 125-129
Numerical optimization of semiconductor waveguide structure
- Year: 2024
- Volume: 17
- Issue: 3.2
- 14
- 3345
- Pages: 98-102
Optimization of mid-infrared quantum cascade detectors
- Year: 2024
- Volume: 17
- Issue: 3.2
- 15
- 3455
- Pages: 93-97
Polarization extinction ratio conversion due to pointing system impact in satellite quantum key distribution
- Year: 2024
- Volume: 17
- Issue: 3.2
- 20
- 3764
- Pages: 88-92
Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 3504
- Pages: 71-77
Quantum state preparation with optical injection: Issue of intersymbol interference
- Year: 2024
- Volume: 17
- Issue: 3.1
- 9
- 3736
- Pages: 173-177
Heterostructure design features for 975 nm high-power laser diodes
- Year: 2024
- Volume: 17
- Issue: 3.1
- 7
- 3546
- Pages: 129-133
Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy
- Year: 2024
- Volume: 17
- Issue: 3.1
- 15
- 3989
- Pages: 100-104
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 22
- 3764
- Pages: 79-83
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 16
- 3816
- Pages: 38-42
The electronic structure of gallium oxide nanocrystals doped with shallow donors
- Year: 2024
- Volume: 17
- Issue: 3
- 41
- 4222
- Pages: 7-16
Photoinduced light absorption in Ge/Si quantum dots
- Year: 2024
- Volume: 17
- Issue: 1.1
- 44
- 4881
- Pages: 105-112
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 4811
- Pages: 68-76
Excess leakage of information in quantum key distribution with passive side channels
- Year: 2023
- Volume: 16
- Issue: 3.2
- 19
- 4773
- Pages: 439-442
Improvement of the thermoregulator of the quantum frequency standard on rubidium-87 atoms
- Year: 2023
- Volume: 16
- Issue: 3.2
- 10
- 5074
- Pages: 394-399
Experimental evaluation of imperfections of quantum states for time-bin encoding
- Year: 2023
- Volume: 16
- Issue: 3.2
- 29
- 4770
- Pages: 366-371
Determination of the isoelectric point of the antibody to SARS-CoV-2 by molecular modeling for conjugation with quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.2
- 14
- 5369
- Pages: 360-365
Coating of hydrophilic chalcogenide quantum dots with carboxymethyl chitosan for lateral flow immunoassay applications
- Year: 2023
- Volume: 16
- Issue: 3.2
- 9
- 4880
- Pages: 312-317
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 14
- 5082
- Pages: 255-260
Phosphine-free synthesis of selenide colloidal quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.2
- 23
- 5267
- Pages: 125-129
Real-time calibration methods for a commercial MDI-QKD system
- Year: 2023
- Volume: 16
- Issue: 3.2
- 25
- 4816
- Pages: 97-102
Influence of quantum states imperfections on the error rate in measurement-device-independent quantum key distribution
- Year: 2023
- Volume: 16
- Issue: 3.2
- 26
- 4963
- Pages: 69-74
Influence of detector dead time on the key generation rate in measurement-device-independent quantum key distribution
- Year: 2023
- Volume: 16
- Issue: 3.1
- 33
- 5234
- Pages: 374-348
Passive optical scheme for BB84 protocol with polarization encoding on a silicon nitride platform
- Year: 2023
- Volume: 16
- Issue: 3.1
- 32
- 5445
- Pages: 284-288
Localization microscopy of single photon emitters in locally strained monolayer semiconductor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 4740
- Pages: 273-277
Evaluation of quantum efficiency of InGaAs/InP single-photon detectors in quantum key distribution systems
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 5100
- Pages: 237-241
Detection-efficiency mismatch in a satellite-to-ground quantum communication
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 5356
- Pages: 216-220
Formation features of motion trajectory of mercury-199 ions in the quantum frequency standard for space applications
- Year: 2023
- Volume: 16
- Issue: 3.1
- 6
- 5650
- Pages: 198-203
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 5001
- Pages: 64-68
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 35
- 5305
- Pages: 47-52
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 31
- 5626
- Pages: 170-175
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 27
- 5391
- Pages: 157-162
Polarimetry of waveguiding heterostructures with quantum well-dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 13
- 5276
- Pages: 140-145
Electrically controlled switching between spatially separated conducting channels in a quantum point contact
- Year: 2023
- Volume: 16
- Issue: 1.3
- 32
- 5561
- Pages: 117-123
Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K
- Year: 2023
- Volume: 16
- Issue: 1.3
- 18
- 5354
- Pages: 112-116
Modeling of coherent dynamics of excitons in a GaAs quantum well in the pump-probe experiment
- Year: 2023
- Volume: 16
- Issue: 1.3
- 24
- 5246
- Pages: 79-84
Investigation of infrared photoresponse from structure with GeSiSn/Si multiple quantum wells
- Year: 2023
- Volume: 16
- Issue: 1.3
- 25
- 5186
- Pages: 73-78
Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling
- Year: 2023
- Volume: 16
- Issue: 1.3
- 22
- 5327
- Pages: 62-66
Thermal characteristics of III-V microlasers bonded onto silicon board
- Year: 2023
- Volume: 16
- Issue: 1.2
- 37
- 5662
- Pages: 108-113
Change of radiative and low-frequency noise characteristics of UV LEDs based on InGaN/GaN quantum wells at liquid nitrogen temperature
- Year: 2023
- Volume: 16
- Issue: 1.2
- 14
- 5359
- Pages: 96-102
Dominant recombination in a GaAs solar cell through a compressed GaAs/In0.4Ga0.6As/GaAs quantum well
- Year: 2023
- Volume: 16
- Issue: 1.2
- 33
- 5863
- Pages: 77-82
Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs
- Year: 2023
- Volume: 16
- Issue: 1.2
- 35
- 5963
- Pages: 70-76
1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs
- Year: 2023
- Volume: 16
- Issue: 1.1
- 48
- 5948
- Pages: 456-462
Influence of GaP compensating layers on the characteristics of GaAs photovoltaic converters with InGaAs quantum dot arrays
- Year: 2023
- Volume: 16
- Issue: 1.1
- 18
- 5458
- Pages: 411-415
Thermally induced depolarization of fluorescence of matrix-isolated MoS2 nanodots
- Year: 2023
- Volume: 16
- Issue: 1.1
- 7
- 5437
- Pages: 356-362
Numerical simulation of waveguide couplers using the coupled mode theory for quantum gates implementation
- Year: 2023
- Volume: 16
- Issue: 1.1
- 29
- 5986
- Pages: 320-325
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 26
- 5583
- Pages: 153-157
Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers
- Year: 2023
- Volume: 16
- Issue: 1.1
- 42
- 6098
- Pages: 49-53
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 38
- 5998
- Pages: 22-27
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 87
- 6760
- Pages: 32-43
Integrated optical transceiver based on III-V microdisk laser and photodiode
- Year: 2022
- Volume: 15
- Issue: 3.3
- 30
- 6196
- Pages: 371-375
Phase-time-encoding MDI QKD tolerant to detector imperfections
- Year: 2022
- Volume: 15
- Issue: 3.3
- 31
- 6041
- Pages: 365-370
Dynamics of the uncertainty value of quadratures for bosonic quantum states
- Year: 2022
- Volume: 15
- Issue: 3.3
- 15
- 6146
- Pages: 360-364
Features of microwave excitation signal formation in a quantum frequency standard
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 5818
- Pages: 354-359
Measurement of the internal quantum efficiency of emission in the local region of the LED chip
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 6339
- Pages: 226-229
Polarization compensation design for free-space quantum communication transmitter
- Year: 2022
- Volume: 15
- Issue: 3.3
- 37
- 6110
- Pages: 202-206
Novel method for preparing high-indistinguishable coherent states
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 6038
- Pages: 198-201
The investigation of optical coupling of microlasers with tapered fiber
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 6708
- Pages: 167-170
Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board
- Year: 2022
- Volume: 15
- Issue: 3.3
- 33
- 6042
- Pages: 163-166
A comprehensive study of electroluminescence and temperature distribution of “UX:3” AlInGaN LED
- Year: 2022
- Volume: 15
- Issue: 3.3
- 15
- 6234
- Pages: 142-146
Investigation of the optical properties of quantum dots depending on the nature and number of additional semiconductor layers
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 6000
- Pages: 106-110
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 6193
- Pages: 48-53
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 6473
- Pages: 42-47
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 6537
- Pages: 31-35
Improvement of the characteristics of the frequency synthesizer in the quantum frequency standard on caesium-133 atoms
- Year: 2022
- Volume: 15
- Issue: 3.2
- 13
- 5929
- Pages: 412-418
Study of quantum dots conjugation with antibodies to be used in a lateral flow immunochromatographic assay
- Year: 2022
- Volume: 15
- Issue: 3.2
- 46
- 6110
- Pages: 331-335
Silicon nanoantenna for controlling the polarization direction of radiation from standalone quantum light source
- Year: 2022
- Volume: 15
- Issue: 3.2
- 8
- 6040
- Pages: 235-239
Gain-switched VCSEL as a quantum entropy source: the problem of quantum and classical noise
- Year: 2022
- Volume: 15
- Issue: 3.2
- 37
- 6378
- Pages: 201-205
Förster resonance energy transfer from colloidal quantum dots to xanthene dye in polymer film
- Year: 2022
- Volume: 15
- Issue: 3.2
- 14
- 6447
- Pages: 80-85
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 35
- 6219
- Pages: 75-79
Influence of polarization reference frame rotation on groundreceiver error rate in satellite quantum key distribution
- Year: 2022
- Volume: 15
- Issue: 3.2
- 57
- 6990
- Pages: 61-64
Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots
- Year: 2022
- Volume: 15
- Issue: 3.2
- 62
- 7605
- Pages: 25-30
An exciton in the superstrong and hyperstrong magnetic fields
- Year: 2020
- Volume: 13
- Issue: 4
- 47
- 9539
- Pages: 9-27
Asymptotic effects in dijet production in proton-proton collisions at extremely high energies
- Year: 2019
- Volume: 12
- Issue: 2
- 52
- 9418
- Pages: 121-129
Effect of gamma radiation on luminescence and photoconductivity of MEH-PPV – lead sulfide nanocomposite
- Year: 2018
- Volume: 11
- Issue: 4
- 25
- 10459
- Pages: 35-46
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 10182
- Pages: 7-13
Small hydrogen-like centers and excitons in structures with single quantum wells
- Year: 2009
- Issue: 3
- 1
- 9732
- Pages: 62-66
Gamma-induced effect on the luminescence of nanocomposites of MEH-PPV conductive polymer with lead sulphide quantum dots
- Year: 2018
- Volume: 11
- Issue: 2
- 27
- 10310
- Pages: 41-48
Quantization of the energy density in a closed universe
- Year: 2018
- Volume: 11
- Issue: 1
- 33
- 10103
- Pages: 147-156
Formation of quantum vortices upon atom ionization by a pulse of electromagnetic waves
- Year: 2017
- Volume: 10
- Issue: 4
- 214
- 10849
- Pages: 111-123
Visible quantum cutting in green emitting BaF2: Gd3+, Tb3+ phosphors: an approach towards mercury-free lamps
- Year: 2017
- Volume: 10
- Issue: 3
- 94
- 10775
- Pages: 64-74
On the initial state of the universe in the theory of inflation
- Year: 2017
- Volume: 10
- Issue: 2
- 95
- 10348
- Pages: 115-122
A regularization of the Hartle-Hawking wave function
- Year: 2017
- Volume: 10
- Issue: 2
- 58
- 10304
- Pages: 110-114
Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation
- Year: 2016
- Issue: 4
- 88
- 10118
- Pages: 56-65
The formation of the angular dependences of the inelastically scattered electrons by their quantum transport near the surface of a solid
- Year: 2016
- Issue: 2
- 204
- 10070
- Pages: 65-71
Colloidal CdSe and ZnSe/Mn quantum dots: their cytotoxicity and effect on cell morphology
- Year: 2015
- Issue: 3
- 2461
- 13486
- Pages: 86-95
Structural features of indium antimonide quantum dots on the indium arsenide substrate
- Year: 2015
- Issue: 2
- 366
- 10616
- Pages: 11-18
The external quantum yield of photoresponce of tandem solar cells
- Year: 2009
- Issue: 2
- 0
- 10085
- Pages: 14-23
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 9425
- Pages: 11-14
Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
- Year: 2013
- Issue: 4
- 430
- 10526
- Pages: 109-114
The states density simulation in 2D-system of charged impurities
- Year: 2010
- Issue: 2
- 0
- 9665
- Pages: 23-27
Photoinduced absorption in structures with Се/Si quantum dots
- Year: 2011
- Issue: 3
- 0
- 10005
- Pages: 46-50
The Shubnikov - de Haas and the de Haas - van Alphen effects in bulk crystals and low-dimension structures
- Year: 2011
- Issue: 4
- 0
- 10036
- Pages: 7-16
Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes
- Year: 2012
- Issue: 3
- 0
- 9816
- Pages: 45-48
Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells
- Year: 2012
- Issue: 3
- 0
- 10084
- Pages: 9-15
Optical absorption in Ge/Si quantum dots at different population densities of the dots states
- Year: 2012
- Issue: 4
- 0
- 10343
- Pages: 9-15
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 660
- 10627
- Pages: 130-136